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Volumn 520, Issue 14, 2012, Pages 4551-4555

Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material

(12) Bertaud, T a Walczyk, D a Walczyk, Ch a Kubotsch, S a Sowinska, M a Schroeder, T a Wenger, Ch a Vallee C b Gonon, P b Mannequin, C b Jousseaume, V c Grampeix, H c

a IHP (Germany)

b Joseph Fourier University (France)

c CEA LETI (France)

Author keywords

HfO2; Metal top electrode; Metal Insulator Metal (MIM); Resistance change random access memory (RRAM)

Indexed keywords

ADLAYERS; ENTHALPY OF FORMATION; HFO2; MAIN PARAMETERS; METAL ELECTRODES; METAL INSULATOR METALS; RESISTANCE CHANGE RANDOM ACCESS MEMORY; RESISTANCE RATIO; RESISTIVE SWITCHING; SWITCHING CYCLES; TOP-ELECTRODE MATERIALS; VOLTAGE LEVELS; WRITE OPERATIONS;

ALUMINUM; HAFNIUM; HAFNIUM OXIDES; LEAD OXIDE; METALS; PLATINUM; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

MIM DEVICES;

EID: 84860276092 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.183 Document Type: Conference Paper

Times cited : (43)

References (32)

1
- 77954502941
- Springer New-York
- K. Zhang Embedded Memories for Nano-Scale VLSIs 2009 Springer New-York
- (2009) Embedded Memories for Nano-Scale VLSIs
- Zhang, K.¹

2
- 35748974883
- R. Waser, and M. Aono Nat. Mater. 6 2007 833
- (2007) Nat. Mater. , vol.6 , pp. 833
- Waser, R.¹ Aono, M.²

3
- 33646885556
- D.C. Kim, S. Seo, S.E. Ahn, D.-S. Suh, M.J. Lee, B.-H. Park, I.K. Yoo, I.G. Baek, H.-J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-I. Chung, J.T. Moon, and B.I. Ryu Appl. Phys. Lett. 88 2006 202102
- (2006) Appl. Phys. Lett. , vol.88 , pp. 202102
- Kim, D.C.¹ Seo, S.² Ahn, S.E.³ Suh, D.-S.⁴ Lee, M.J.⁵ Park, B.-H.⁶ Yoo, I.K.⁷ Baek, I.G.⁸ Kim, H.-J.⁹ Yim, E.K.¹⁰ Lee, J.E.¹¹ Park, S.O.¹² Kim, H.S.¹³ Chung, U.-I.¹⁴ Moon, J.T.¹⁵ Ryu, B.I.¹⁶

4
- 68249159974
- U. Russo, C. Cagli, S. Spiga, E. Cianci, and D. Ielmini IEEE Electron Device Lett. 30 2009 817
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 817
- Russo, U.¹ Cagli, C.² Spiga, S.³ Cianci, E.⁴ Ielmini, D.⁵

5
- 77956032359
- S. Kim, and Y.-K. Choi IEEE Trans. Electron Devices 56 2009 3049
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 3049
- Kim, S.¹ Choi, Y.-K.²

6
- 77956174683
- L. Zhang, R. Huang, M. Zhu, S. Qin, Y. Kuang, D. Gao, C. Shi, and Y. Wang IEEE Electron Device Lett. 31 2010 966
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 966
- Zhang, L.¹ Huang, R.² Zhu, M.³ Qin, S.⁴ Kuang, Y.⁵ Gao, D.⁶ Shi, C.⁷ Wang, Y.⁸

7
- 49049093393
- W.-C. Chien, E.-K. Lai, K.-P. Chang, C.-H. Yeh, M.-H. Hsueh, Y.-D. Yao, T. Luoh, S.-H. Hsieh, T.H. Yang, K.C. Chen, Y.-C. Chen, K.-Y. Hsieh, R. Liu, and C.-Y. Lu Proceedings of the International Symposium on VLSI Technology, Systems and Applications, Taiwan April 21 23 2008 144
- (2008) Proceedings of the International Symposium on VLSI Technology, Systems and Applications, Taiwan , pp. 144
- Chien, W.-C.¹ Lai, E.-K.² Chang, K.-P.³ Yeh, C.-H.⁴ Hsueh, M.-H.⁵ Yao, Y.-D.⁶ Luoh, T.⁷ Hsieh, S.-H.⁸ Yang, T.H.⁹ Chen, K.C.¹⁰ Chen, Y.-C.¹¹ Hsieh, K.-Y.¹² Liu, R.¹³ Lu, C.-Y.¹⁴

8
- 34247561316
- C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, T.-C. Lee, F.-L. Yang, C. Hu, and T.-Y. Tseng IEEE Electron Devices Lett. 28 2007 366
- (2007) IEEE Electron Devices Lett. , vol.28 , pp. 366
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Lee, T.-C.⁴ Yang, F.-L.⁵ Hu, C.⁶ Tseng, T.-Y.⁷

9
- 33645641019
- K. Szot, W. Speier, G. Bihlmayer, and R. Waser Nat. Mater. 5 2006 312
- (2006) Nat. Mater. , vol.5 , pp. 312
- Szot, K.¹ Speier, W.² Bihlmayer, G.³ Waser, R.⁴

10
- 35148849058
- C. Schindler, S.C.P. Thermadam, R. Waser, and M.N. Kozicki IEEE Trans. Electron Devices 54 2007 2762
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 2762
- Schindler, C.¹ Thermadam, S.C.P.² Waser, R.³ Kozicki, M.N.⁴

11
- 77958503301
- P.-S. Chen, H.-Y. Lee, Y.-S. Chen, P.-Y. Gu, F. Chen, and M.-J. Tsai Electrochem. Solid-State Lett. 13 2010 H423
- (2010) Electrochem. Solid-State Lett. , vol.13 , pp. 423
- Chen, P.-S.¹ Lee, H.-Y.² Chen, Y.-S.³ Gu, P.-Y.⁴ Chen, F.⁵ Tsai, M.-J.⁶

12
- 79551621880
- Ch. Walczyk, Ch. Wenger, D. Walczyk, M. Lukosius, I. Costina, M. Fraschke, J. Dabrowski, A. Fox, D. Wolansky, S. Thiess, E. Miranda, B. Tillack, and T. Schroeder J. Vac. Sci. Technol. B 29 2011 01AD02
- (2011) J. Vac. Sci. Technol. B , vol.29
- Walczyk, Ch.¹ Wenger, Ch.² Walczyk, D.³ Lukosius, M.⁴ Costina, I.⁵ Fraschke, M.⁶ Dabrowski, J.⁷ Fox, A.⁸ Wolansky, D.⁹ Thiess, S.¹⁰ Miranda, E.¹¹ Tillack, B.¹² Schroeder, T.¹³

13
- 78149457942
- J. Lee, E.M. Bourim, W. Lee, J. Park, M. Jo, S. Jung, J. Shin, and H. Hwang Appl. Phys. Lett. 97 2010 172105
- (2010) Appl. Phys. Lett. , vol.97 , pp. 172105
- Lee, J.¹ Bourim, E.M.² Lee, W.³ Park, J.⁴ Jo, M.⁵ Jung, S.⁶ Shin, J.⁷ Hwang, H.⁸

14
- 78649446429
- Y.-S. Chen, H.-Y. Lee, P.-S. Chen, T.-Y. Wu, C.-C. Wang, P.-J. Tzeng, F. Chen, M.-J. Tsai, and C. Lien IEEE Electron Device Lett. 31 2010 1473
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1473
- Chen, Y.-S.¹ Lee, H.-Y.² Chen, P.-S.³ Wu, T.-Y.⁴ Wang, C.-C.⁵ Tzeng, P.-J.⁶ Chen, F.⁷ Tsai, M.-J.⁸ Lien, C.⁹

15
- 79956064739
- K.M. Kim, D.S. Jeong, and C.S. Hwang Nanotechnology 22 2011 254002
- (2011) Nanotechnology , vol.22 , pp. 254002
- Kim, K.M.¹ Jeong, D.S.² Hwang, C.S.³

16
- 67650102619
- R. Waser, R. Dittmann, G. Staikov, and K. Szot Adv. Mater. (Weinheim, Ger.) 21 2009 2632
- (2009) Adv. Mater. (Weinheim, Ger.) , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

17
- 0002878283
- J.G. Simmons, and R.R. Verderber Proceedings of the Royal Society of London, Series A, Mathematical and Physical Sciences 301 1967 77
- (1967) Proceedings of the Royal Society of London, Series A, Mathematical and Physical Sciences , vol.301 , pp. 77
- Simmons, J.G.¹ Verderber, R.R.²

18
- 77953489538
- C. Vallée, P. Gonon, C. Jorel, and F. El Kamel Appl. Phys. Lett. 96 2010 233504
- (2010) Appl. Phys. Lett. , vol.96 , pp. 233504
- Vallée, C.¹ Gonon, P.² Jorel, C.³ El Kamel, F.⁴

19
- 75749116656
- T. Bertaud, S. Blonkowski, C. Bermond, C. Vallée, P. Gonon, M. Gros-Jean, and B. Fléchet IEEE Electron Device Lett. 31 2010 114
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 114
- Bertaud, T.¹ Blonkowski, S.² Bermond, C.³ Vallée, C.⁴ Gonon, P.⁵ Gros-Jean, M.⁶ Fléchet, B.⁷

20
- 67649143212
- J.J. Yang, F. Miao, M.D. Pickett, D.A.A. Ohlberg, D.R. Stewart, C.N. Lau, and R.S. Williams Nanotechnology 20 2009 215201
- (2009) Nanotechnology , vol.20 , pp. 215201
- Yang, J.J.¹ Miao, F.² Pickett, M.D.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Lau, C.N.⁶ Williams, R.S.⁷

21
- 78449303523
- R. Muenstermann, T. Menke, R. Dittmann, and R. Waser Adv. Mater. (Weinheim, Ger.) 22 2010 4819
- (2010) Adv. Mater. (Weinheim, Ger.) , vol.22 , pp. 4819
- Muenstermann, R.¹ Menke, T.² Dittmann, R.³ Waser, R.⁴

22
- 67949097936
- H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien, and M.-J. Tsai Tech. dig., Int. Electron Devices Meet., San Francisco December 15 17 2008 1
- (2008) Tech. Dig., Int. Electron Devices Meet., San Francisco , pp. 1
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.-J.¹⁰

23
- 84860310568
- J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K.P. Biju, S. Kim, S. Park, and H. Hwang Tech. dig., Int. Electron Devices Meet., San Francisco December 6-8 2010 19.5.1
- (2010) Tech. Dig., Int. Electron Devices Meet., San Francisco , pp. 1951
- Lee, J.¹ Shin, J.² Lee, D.³ Lee, W.⁴ Jung, S.⁵ Jo, M.⁶ Park, J.⁷ Biju, K.P.⁸ Kim, S.⁹ Park, S.¹⁰ Hwang, H.¹¹

24
- 79951943503
- Y.-S. Chen, H.-Y. Lee, P.-S. Chen, P.-Y. Gu, W.-H. Liu, W.-S. Chen, Y.-Y. Hsu, C.-H. Tsai, F. Chen, M.-J. Tsai, and C. Lien IEEE Electron Device Lett. 32 2011 390
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 390
- Chen, Y.-S.¹ Lee, H.-Y.² Chen, P.-S.³ Gu, P.-Y.⁴ Liu, W.-H.⁵ Chen, W.-S.⁶ Hsu, Y.-Y.⁷ Tsai, C.-H.⁸ Chen, F.⁹ Tsai, M.-J.¹⁰ Lien, C.¹¹

25
- 79952661161
- T.-H. Hou, K.-L. Lin, J. Shieh, J.-H. Lin, C.-T. Chou, and Y.-J. Lee Appl. Phys. Lett. 98 2011 103511
- (2011) Appl. Phys. Lett. , vol.98 , pp. 103511
- Hou, T.-H.¹ Lin, K.-L.² Shieh, J.³ Lin, J.-H.⁴ Chou, C.-T.⁵ Lee, Y.-J.⁶

26
- 79952640478
- S. Yu, Y. Wu, and H.-S.P. Wong Appl. Phys. Lett. 98 2011 103514
- (2011) Appl. Phys. Lett. , vol.98 , pp. 103514
- Yu, S.¹ Wu, Y.² Wong, H.-S.P.³

27
- 34848861772
- J. Robertson, O. Sharia, and A.A. Demkov Appl. Phys. Lett. 91 2007 132912
- (2007) Appl. Phys. Lett. , vol.91 , pp. 132912
- Robertson, J.¹ Sharia, O.² Demkov, A.A.³

28
- 84860269373
- S. Yu, and H.-S. Philip Wong Proceedings of the IEEE International Memory Workshop, Seoul May 16 19, 2010 1
- (2010) Proceedings of the IEEE International Memory Workshop, Seoul , pp. 1
- Yu, S.¹ Philip Wong, H.-S.²

29
- 67649538428
- Ch. Walczyk, Ch. Wenger, R. Sohal, M. Lukosius, A. Fox, J. Da̧browski, D. Wolansky, B. Tillack, H.-J. Müssig, and T. Schroeder J. Appl. Phys. 105 2009 114103
- (2009) J. Appl. Phys. , vol.105 , pp. 114103
- Walczyk, Ch.¹ Wenger, Ch.² Sohal, R.³ Lukosius, M.⁴ Fox, A.⁵ Da̧browski, J.⁶ Wolansky, D.⁷ Tillack, B.⁸ Müssig, H.-J.⁹ Schroeder, T.¹⁰

30
- 67949121971
- M. Haemori, T. Nagata, and T. Chikyow Appl. Phys. Express 2 2009 061401
- (2009) Appl. Phys. Express , vol.2 , pp. 061401
- Haemori, M.¹ Nagata, T.² Chikyow, T.³

31
- 79959353918
- J.J. Yang, J.P. Strachan, F. Miao, M.-X. Zhang, M.D. Pickett, W. Yi, D.A.A. Ohlberg, G. Medeiros-Ribeiro, and R. Stanley Williams Appl. Phys. A: Mater. Sci. Process. 102 2011 785
- (2011) Appl. Phys. A: Mater. Sci. Process. , vol.102 , pp. 785
- Yang, J.J.¹ Strachan, J.P.² Miao, F.³ Zhang, M.-X.⁴ Pickett, M.D.⁵ Yi, W.⁶ Ohlberg, D.A.A.⁷ Medeiros-Ribeiro, G.⁸ Stanley Williams, R.⁹

32
- 79958042911
- D. Walczyk, Ch. Walczyk, T. Schroeder, T. Bertaud, M. Sowinska, M. Lukosius, M. Fraschke, B. Tillack, and Ch. Wenger Microelectron. Eng. 88 2011 1133
- (2011) Microelectron. Eng. , vol.88 , pp. 1133
- Walczyk, D.¹ Walczyk, Ch.² Schroeder, T.³ Bertaud, T.⁴ Sowinska, M.⁵ Lukosius, M.⁶ Fraschke, M.⁷ Tillack, B.⁸ Wenger, Ch.⁹

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