SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 7, 2009, Pages

Switching dynamics in titanium dioxide memristive devices

(7) Pickett, Matthew D a Strukov, Dmitri B a Borghetti, Julien L a Yang, J Joshua a Snider, Gregory S a Stewart, Duncan R a,b Williams, R Stanley a

a HEWLETT PACKARD LABORATORIES (United States)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED CURRENT; DRIFT DIFFUSION; DYNAMICAL PROPERTIES; ELECTRICAL CHARACTERIZATION; IONIZED DOPANTS; MATHEMATICAL DEFINITIONS; METAL OXIDES; METAL-OXIDE; NEUROMORPHIC COMPUTING; NON-VOLATILE MEMORIES; PHYSICAL PROCESS; SWITCHING DYNAMICS;

ELECTRIC PROPERTIES; HYSTERESIS; NONVOLATILE STORAGE; OXIDE FILMS; SWITCHES; TITANIUM; TITANIUM DIOXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70350092588 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236506 Document Type: Article

Times cited : (652)

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