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Volumn 102, Issue 17, 2013, Pages

Atomic-level quantized reaction of HfOx memristor

(9) Syu, Yong En a Chang, Ting Chang a Lou, Jyun Hao a Tsai, Tsung Ming a Chang, Kuan Chang a Tsai, Ming Jinn b Wang, Ying Lang c Liu, Ming d Sze, Simon M a,e

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

d INSTITUTE OF MICROELECTRONICS (China)

e NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; CONDUCTIVE PATHS; DYNAMIC SWITCHING; MEMRISTOR; METALLIC FILAMENTS; RESISTIVE SWITCHING; SWITCHING PHENOMENON;

MEMRISTORS; PASSIVE FILTERS; RESISTORS; SWITCHING SYSTEMS;

ATOMS;

EID: 84877273642 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4802821 Document Type: Article

Times cited : (111)

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