Unipolar resistive switch based on silicon monoxide realized by CMOS technology

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 870-872

  Zhang, Lijie ^a   Huang, Ru ^a   Gao, Dejin ^a   Wu, Dake ^a   Kuang, Yongbian ^a   Tang, Poren ^a   Ding, Wei ^a   Wang, Albert Z H ^b   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b University of California ^*  (United States)

Author keywords

Conduction mechanism; Memory; Resistive switching; Silicon monoxide (SiO)

Indexed keywords

CMOS TECHNOLOGY; CONDUCTION MECHANISM; COPPER IONS; EXPERIMENTAL DATA; LOW-TEMPERATURE PROCESS; MEMORY; NON-VOLATILE; RESISTANCE RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SILICON MONOXIDE; SILICON MONOXIDE (SIO); SWITCHING MECHANISM;

CMOS INTEGRATED CIRCUITS; METAL IONS; SILICON COMPOUNDS; SWITCHING; SWITCHING SYSTEMS;

SILICON OXIDES;

EID: 68249137194     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024650     Document Type: Article

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