Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface

Journal of Physics D: Applied Physics

Volumn 42, Issue 17, 2009, Pages

  Yang, R ^a,b   Li, X M ^a   Yu, W D ^a   Gao, X D ^a   Liu, X J ^a   Cao, X ^a,b   Wang, Q ^a   Chen, L D ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; CARRIER TRANSPORT PROCESS; CONDUCTIVE FILAMENTS; ELECTRIC-PULSE-INDUCED RESISTANCE SWITCHING; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NEGATIVE VOLTAGE; RESISTANCE CHANGE; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECT; SIMPLE METHOD; SOFT BREAKDOWN; TRIGGER CONDITIONS;

CALCIUM; ELECTRIC RESISTANCE; MANGANESE COMPOUNDS; PLATINUM; SWITCHING; SWITCHING SYSTEMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70149096157     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/17/175408     Document Type: Article

References (29)

1. Liu S Q, Wu N J and Ignatiev A 2000 Appl. Phys. Lett. 76 2749
2. Janousch M, Meijer G I, Staub U, Delley B, Karg S F and Andreasson B P 2007 Adv. Mater. 19 2232
3. Shen W, Dittmann R, Breuer U and Waser R 2008 Appl. Phys. Lett. 93 222102
4. Wu X, Zhou P, Li J, Chen L Y, Lin H and Tang T A 2007 Appl. Phys. Lett. 90 183507
5. Kim D C et al 2006 Appl. Phys. Lett. 88 202102
6. Shang D S, Sun J R, Shi L, Wang Z H and Shen B G 2008 Appl. Phys. Lett. 93 172119
7. Ma L P, Xu Q F and Yang Y 2004 Appl. Phys. Lett. 84 4908
8. Kim T W, Oh S H, Choi H, Wang G, Hwang H, Kim D Y and Lee T 2008 Appl. Phys. Lett. 93 253308
9. Sawa A, Fujii T, Kawasaki M and Tokura Y 2004 Appl. Phys. Lett. 85 4073
10. Fujii T, Kawasaki M, Sawa A, Akoh H, Kawazoe Y and Tokura Y 2005 Appl. Phys. Lett. 86 012107
11. Wu S X, Xu L M, Xing X J, Chen S M, Yuan Y B, Liu Y J, Yu Y P, Li X Y and Li S W 2008 Appl. Phys. Lett. 93 043502
12. Nian Y B, Strozier J, Wu N J, Chen X and Ignatiev A 2007 Phys. Rev. Lett. 98 146403
13. Szot K, Speier W, Bihlmayer G and Waser R 2006 Nature Mater. 5 312
14. Shang D S, Wang Q, Chen L D, Dong R, Li X M and Zhang W Q 2006 Phys. Rev. B 73 245427
15. Odagawa A, Sato H, Inoue I H, Akoh H, Kawasaki M, Tokura Y, Kanno T and Adachi H 2004 Phys. Rev. B 70 224403
16. Rozenberg M J, Inoue I H and Sanchez M J 2006 Appl. Phys. Lett. 88 033510
17. Tokunaga Y, Kaneko Y, He J P, Arima T, Sawa A, Fujii T, Kawasaki M and Tokura Y 2006 Appl. Phys. Lett. 88 223507
18. Tsubouchi K, Ohkubo I, Kumigashira H, Oshima M, Matsumoto Y, Itaka K, Ohnishi T, Lippmaa M and Koinuma H 2007 Adv. Mater. 19 1711
19. Yu W D, Li X M, Rui Y, Liu X J, Wang Q and Chen L D 2008 J. Phys. D: Appl. Phys. 41 215409
20. Shang D S, Chen L D, Wang Q, Wu Z H, Zhang W Q and Li X M 2007 J. Phys. D: Appl. Phys. 40 5373
21. Fujimoto M, Koyama H, Nishi Y and Suzuki T 2007 Appl. Phys. Lett. 91 223504
22. Dong R et al 2007 Appl. Phys. Lett. 90 182118
23. Hasan M, Dong R, Choi H J, Lee D S, Seong D J, Pyun M B and Hwang H 2008 Appl. Phys. Lett. 92 202102
24. Harada T, Ohkubo I, Tsubouchi K, Kumigashira H, Ohnishi T, Lippmaa M, Matsumoto Y, Koinuma H and Oshima M 2008 Appl. Phys. Lett. 92 222113
25. Shono K, Kawano H, Yokota T and Gomi M 2008 Appl. Phys. Express 1 055002
26. Kawano H, Shono K, Yokota T and Gomi M 2008 Appl. Phys. Express 1 101901
27. Wang Q, Shang D S, Wu Z H, Chen L D and Li X M 2007 Appl. Phys. A: Mater. Sci. Process. 86 357
28. Plecenik A, Frohlich K, Espinos J P, Holgado J P, Halabica A, Pripko M and Gilabert A 2002 Appl. Phys. Lett. 81 859
29. Kever T, Böttger U, Schindler C and Waser R 2007 Appl. Phys. Lett. 91 083506