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Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure

(4) Zhu, W a Chen, T P a Liu, Y b Fung, S c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AL OXIDE; ALUMINUM OXIDES; CONDUCTION MECHANISM; ELECTRON HOPPING; HIGH FIELD; HIGH-RESISTANCE STATE; LOW FIELD; LOW-RESISTANCE STATE; METALLIC FILAMENTS; NANO-PHASE; OHMIC CONDUCTION; POTENTIAL WELLS; PURE ALUMINUM; RESISTIVE SWITCHING BEHAVIORS; SET VOLTAGE; THERMAL EXCITATION; THIN-FILM STRUCTURE;

ACTIVATION ENERGY; CONDUCTION BANDS; GIANT MAGNETORESISTANCE; METALLIC COMPOUNDS;

ALUMINUM;

EID: 84867081673 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4754011 Document Type: Article

Times cited : (37)

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