Scaling potential of local redox processes in memristive SrTiO 3 thin-film devices

Proceedings of the IEEE

Volumn 100, Issue 6, 2012, Pages 1979-1990

  Dittmann, Regina ^a   Muenstermann, Ruth ^a   Krug, Ingo ^a   Park, Daesung ^b   Menke, Tobias ^a,c   Mayer, Joachim ^b   Besmehn, Astrid ^a   Kronast, Florian ^d   Schneider, Claus Michael ^a   Waser, Rainer ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AUDI AG   (Germany)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

Device scaling; memristive device; redox process; resistive switching; transition metal oxides

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRODES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRON COMPOUNDS; MEMRISTORS; METAL INSULATOR BOUNDARIES; STRONTIUM TITANATES; SWITCHING; THIN FILM CIRCUITS; THIN FILM DEVICES; THIN FILMS; TITANIUM COMPOUNDS; TRANSITION METAL OXIDES; TRANSITION METALS;

DEVICE-SCALING; MEMRISTIVE DEVICE; METAL-INSULATOR-METAL STRUCTURES; PHOTOELECTRON SPECTROMICROSCOPY; REDOX PROCESS; RESISTIVE SWITCHING; SPATIALLY RESOLVED ANALYSIS; SWITCHING PROPERTIES;

MIM DEVICES;

EID: 84861190807     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2012.2188771     Document Type: Conference Paper

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