Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch

Nanotechnology

Volumn 23, Issue 43, 2012, Pages

  Tsuruoka, Tohru ^a,b   Hasegawa, Tsuyoshi ^a,b   Terabe, Kazuya ^a   Aono, Masakazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SWITCHES; BIOLOGICAL SYNAPSIS; BUILDING BLOCKES; CONDUCTANCE QUANTIZATION; LONG-TERM POTENTIATIONS; METAL FILAMENTS; MIM STRUCTURE; NEURAL COMPUTING; QUANTIZED CONDUCTANCE; RESISTIVE SWITCHING MEMORIES; VOLTAGE PULSE;

ATOMS; ELECTRIC POTENTIAL; MIM DEVICES; POINT CONTACTS; QUANTUM ELECTRONICS; TANTALUM OXIDES;

TANTALUM;

OXIDE; TANTALUM; TANTALUM OXIDE;

ARTICLE; BIOLOGICAL MODEL; BIOMIMETICS; CHEMISTRY; ELECTRIC CONDUCTIVITY; PHYSIOLOGY; SYNAPSE;

BIOMIMETICS; ELECTRIC CONDUCTIVITY; MODELS, BIOLOGICAL; OXIDES; SYNAPSES; TANTALUM;

EID: 84867460266     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/43/435705     Document Type: Article

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