Uniform resistive switching with a thin reactive metal interface layer in metal- La0.7 Ca0.3 Mn O3 -metal heterostructures

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Hasan, Musarrat ^a   Dong, Rui ^a   Choi, H J ^a   Lee, D S ^a   Seong, D J ^a   Pyun, M B ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTROMIGRATION; HYSTERESIS; SAMARIUM COMPOUNDS; SWITCHING;

DATA RETENTION; OXYGEN IONS; RESISTIVE HYSTERESIS; SWITCHING UNIFORMITY;

HETEROJUNCTIONS;

EID: 44349114419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2932148     Document Type: Article

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