SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

Electrode dependence of filament formation in HfO2 resistive-switching memory

(6) Lin, Kuan Liang a Hou, Tuo Hung a Shieh, Jiann b,c Lin, Jun Hung d Chou, Cheng Tung d Lee, Yao Jen b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c NATIONAL UNITED UNIVERSITY (Taiwan)

d NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; ELEVATED TEMPERATURE; FILAMENT FORMATION; METAL CATION; METAL ELECTRODES; METALLIZATIONS; NON-POLAR; RESISTIVE SWITCHING MEMORIES; SWITCHING CHARACTERISTICS; SWITCHING POWER;

HAFNIUM COMPOUNDS; OXYGEN; SWITCHING;

ELECTROCHEMICAL ELECTRODES;

EID: 79955708416 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567915 Document Type: Article

Times cited : (290)

References (25)

1
- 21644443347
- 10.1109/IEDM.2004.1419228
- I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U -In Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet. 2004, 587. 10.1109/IEDM.2004.1419228
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 587
- Baek, I.G.¹ Lee, M.S.² Seo, S.³ Lee, M.J.⁴ Seo, D.H.⁵ Suh, D.S.⁶ Park, J.C.⁷ Park, S.O.⁸ Kim, H.S.⁹ Yoo, I.K.¹⁰ Chung, U.-I.¹¹ Moon, J.T.¹²

2
- 34247561316
- 2 film memory devices
- DOI 10.1109/LED.2007.894652
- C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, T.-C. Lee, F.-L. Yang, C. Hu, and T.-Y. Tseng, IEEE Electron. Device Lett. 28, 366 (2007). 10.1109/LED.2007.894652 (Pubitemid 46667430)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.5 , pp. 366-368
- Lin, C.-Y.¹ Wu, C.-Y.² Wu, C.-Y.³ Chung, Y.⁴ Lee, T.-C.⁵ Yang, F.-L.⁶ Hu, C.⁷ Tseng, T.-Y.⁸

3
- 49149097171
- 10.1063/1.2967194
- C. B. Lee, B. S. Kang, A. Benayad, M. J. Lee, S.-E. Ahn, K. H. Kim, G. Stefanovich, Y. Park, and I. K. Yoo, Appl. Phys. Lett. 93, 042115 (2008). 10.1063/1.2967194
- (2008) Appl. Phys. Lett. , vol.93 , pp. 042115
- Lee, C.B.¹ Kang, B.S.² Benayad, A.³ Lee, M.J.⁴ Ahn, S.-E.⁵ Kim, K.H.⁶ Stefanovich, G.⁷ Park, Y.⁸ Yoo, I.K.⁹

4
- 70450250236
- 10.1016/j.mee.2009.05.023
- W.-G. Kima and S.-W. Rhee, Microelectron. Eng. 87, 98 (2010). 10.1016/j.mee.2009.05.023
- (2010) Microelectron. Eng. , vol.87 , pp. 98
- Kima, W.-G.¹ Rhee, S.-W.²

5
- 35748974883
- Nanoionics-based resistive switching memories
- DOI 10.1038/nmat2023, PII NMAT2023
- R. Waser and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
- (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
- Waser, R.¹ Aono, M.²

6
- 34547902189
- Low-power switching of nonvolatile resistive memory using hafnium oxide
- DOI 10.1143/JJAP.46.2175, Solid State Devices and Materials
- H.-Y. Lee, P.-S. Chen, C.-C. Wang, S. Maikap, P.-J. Tzeng, C.-H. Lin, L.-S. Lee, and M.-J. Tsai, Jpn. J. Appl. Phys. 46, 2175 (2007). 10.1143/JJAP.46.2175 (Pubitemid 47256745)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.4 B , pp. 2175-2179
- Lee, H.-Y.¹ Chen, P.-S.² Wang, C.-C.³ Maikap, S.⁴ Tzeng, P.-J.⁵ Lin, C.-H.⁶ Lee, L.-S.⁷ Tsai, M.-J.⁸

7
- 42149174364
- Electrical evidence of unstable anodic interface in RuHf Ox TiN unipolar resistive memory
- DOI 10.1063/1.2908928
- H. Y. Lee, P. S. Chen, T. Y. Wu, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, M.-J. Tsai, and C. H. Lien, Appl. Phys. Lett. 92, 142911 (2008). 10.1063/1.2908928 (Pubitemid 351535634)
- (2008) Applied Physics Letters , vol.92 , Issue.14 , pp. 142911
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Wang, C.C.⁴ Tzeng, P.J.⁵ Lin, C.H.⁶ Chen, F.⁷ Tsai, M.-J.⁸ Lien, C.⁹

8
- 64549149261
- 10.1109/IEDM.2008.4796677
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 2008, 297. 10.1109/IEDM.2008.4796677
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.-J.¹⁰

9
- 67949121971
- 10.1143/APEX.2.061401
- M. Haemori, T. Nagata, and T. Chikyow, Appl. Phys. Express 2, 061401 (2009). 10.1143/APEX.2.061401
- (2009) Appl. Phys. Express , vol.2 , pp. 061401
- Haemori, M.¹ Nagata, T.² Chikyow, T.³

10
- 34548263330
- Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
- DOI 10.1063/1.2769759
- C. B. Lee, B. S. Kang, M. J. Lee, S. E. Ahn, G. Stefanovich, W. X. Xianyu, K. H. Kim, J. H. Hur, H. X. Yin, Y. Park, I. K. Yoo, J.-B. Park, and B. H. Park, Appl. Phys. Lett. 91, 082104 (2007). 10.1063/1.2769759 (Pubitemid 47318956)
- (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 082104
- Lee, C.B.¹ Kang, B.S.² Lee, M.J.³ Ahn, S.E.⁴ Stefanovich, G.⁵ Xianyu, W.X.⁶ Kim, K.H.⁷ Hur, J.H.⁸ Yin, H.X.⁹ Park, Y.¹⁰ Yoo, I.K.¹¹ Park, J.-B.¹² Park, B.H.¹³

11
- 0006740024
- 10.1063/1.108634
- I. Banerjee and D. Kuzminov, Appl. Phys. Lett. 62, 1541 (1993). 10.1063/1.108634
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1541
- Banerjee, I.¹ Kuzminov, D.²

12
- 0037442260
- 10.1143/JJAP.42.L138
- N. Miyata, M. Ichikawa, T. Nabatame, T. Horikawa, and A. Toriumi, Jpn. J. Appl. Phys. 42, L138 (2003). 10.1143/JJAP.42.L138
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 138
- Miyata, N.¹ Ichikawa, M.² Nabatame, T.³ Horikawa, T.⁴ Toriumi, A.⁵

13
- 69949132864
- 10.1063/1.3224179
- Y. H. Do, J. S. Kwak, Y. C. Bae, K. Jung, H. Im, and J. P. Hong, Appl. Phys. Lett. 95, 093507 (2009). 10.1063/1.3224179
- (2009) Appl. Phys. Lett. , vol.95 , pp. 093507
- Do, Y.H.¹ Kwak, J.S.² Bae, Y.C.³ Jung, K.⁴ Im, H.⁵ Hong, J.P.⁶

14
- 35148849058
- 2
- DOI 10.1109/TED.2007.904402
- C. Schindler, S. C. P. Thermadam, R. Waser, and M. N. Kozicki, IEEE. Trans. Electron Devices 54, 2762 (2007). 10.1109/TED.2007.904402 (Pubitemid 47541876)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.10 , pp. 2762-2768
- Schindler, C.¹ Thermadam, S.C.P.² Waser, R.³ Kozicki, M.N.⁴

15
- 34548406505
- Electronic transport in Ta2 O5 resistive switch
- DOI 10.1063/1.2777170
- T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, and M. Aono, Appl. Phys. Lett. 91, 092110 (2007). 10.1063/1.2777170 (Pubitemid 47352295)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092110
- Sakamoto, T.¹ Lister, K.² Banno, N.³ Hasegawa, T.⁴ Terabe, K.⁵ Aono, M.⁶

16
- 57349143757
- 10.1063/1.3039079
- W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, Appl. Phys. Lett. 93, 223506 (2008). 10.1063/1.3039079
- (2008) Appl. Phys. Lett. , vol.93 , pp. 223506
- Guan, W.¹ Liu, M.² Long, S.³ Liu, Q.⁴ Wang, W.⁵

17
- 33244479588
- Ni diffusion studies from fully-silicided NiSi into Si
- DOI 10.1149/1.2167927
- P. Zhao, I. Trachtenberg, M. J. Kim, B. E. Gnade, and R. M. Wallace, Electrochem. Solid-State Lett. 9, G111 (2006). 10.1149/1.2167927 (Pubitemid 43279728)
- (2006) Electrochemical and Solid-State Letters , vol.9 , Issue.4
- Zhao, P.¹ Trachtenberg, I.² Kim, M.J.³ Gnade, B.E.⁴ Wallace, R.M.⁵

18
- 79955747041
- Evans Analytical Group LLC, Sunnyvale, CA 94086 USA
- Evans Analytical Group LLC, Sunnyvale, CA 94086 USA, http://www.cea.com.

19
- 0036508455
- 10.1147/rd.462.0265
- J. H. Stathis, IBM. J. Res. Dev. 46, 265 (2002). 10.1147/rd.462.0265
- (2002) IBM. J. Res. Dev. , vol.46 , pp. 265
- Stathis, J.H.¹

20
- 0036475491
- A study of soft and hard breakdown-Part I: Analysis of statistical percolation conductance
- DOI 10.1109/16.981212, PII S0018938302008213
- M. A. Alam, B. E. Weir, and P. J. Silverman, IEEE. Trans. Electron Devices 49, 232 (2002). 10.1109/16.981212 (Pubitemid 34277196)
- (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.2 , pp. 232-238
- Alam, M.A.¹ Weir, B.E.² Silverman, P.J.³

21
- 68349158917
- 10.1109/TED.2009.2024046
- C. Cagli, F. Nardi, and D. Ielmini, IEEE. Trans. Electron Devices 56, 1712 (2009). 10.1109/TED.2009.2024046
- (2009) IEEE. Trans. Electron Devices , vol.56 , pp. 1712
- Cagli, C.¹ Nardi, F.² Ielmini, D.³

22
- 60749127336
- 10.1063/1.3077310
- C. Schindler, G. Staikov, and R. Waser, Appl. Phys. Lett. 94, 072109 (2009). 10.1063/1.3077310
- (2009) Appl. Phys. Lett. , vol.94 , pp. 072109
- Schindler, C.¹ Staikov, G.² Waser, R.³

23
- 0038570678
- 10.1088/0034-4885/27/1/307
- M. A. Lampert, Rep. Prog. Phys. 27, 329 (1964). 10.1088/0034-4885/27/1/ 307
- (1964) Rep. Prog. Phys. , vol.27 , pp. 329
- Lampert, M.A.¹

24
- 57049104587
- 10.1063/1.3036532
- S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Seo, B. Kahng, and T. W. Noh, Appl. Phys. Lett. 93, 212105 (2008). 10.1063/1.3036532
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212105
- Lee, S.B.¹ Chae, S.C.² Chang, S.H.³ Lee, J.S.⁴ Seo, S.⁵ Kahng, B.⁶ Noh, T.W.⁷

25
- 33846809295
- Magnetotransport studies of a single nickel nanowire
- DOI 10.1088/0957-4484/18/1/015202, PII S095744840731369X
- Y. Rheem, B.-Y. Yoo, W. P. Beyermann, and N. V. Myung, Nanotechnology 18, 015202 (2007). 10.1088/0957-4484/18/1/015202 (Pubitemid 46212161)
- (2007) Nanotechnology , vol.18 , Issue.1 , pp. 015202
- Rheem, Y.¹ Yoo, B.-Y.² Beyermann, W.P.³ Myung, N.V.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.