Resistive switching by voltage-driven ion migration in bipolar RRAMPart I: Experimental study

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2461-2467

  Nardi, Federico ^a,b   Larentis, Stefano ^a,c   Balatti, Simone ^a   Gilmer, David C ^d   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b Intermolecular   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d SEMATECH   (United States)

Author keywords

Bipolar switching; memory modeling; Resistive switching random access memory (RRAM); transition metal oxide

Indexed keywords

COMPLIANCE CURRENT; CONDUCTIVE FILAMENTS; EXPERIMENTAL STUDIES; FILAMENT MORPHOLOGY; HIGH-RESISTANCE STATE; INTERMEDIATE STATE; ION MIGRATION; LOW-RESISTANCE STATE; MEMORY MODELING; MICROSCOPIC INTERPRETATION; RANDOM ACCESS MEMORIES; RELIABILITY PERFORMANCE; RESET VOLTAGE; RESISTIVE SWITCHING; TRANSITION-METAL OXIDES;

LOGIC DEVICES; METALLIC COMPOUNDS; SWITCHING; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 84865366777     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2202319     Document Type: Article

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