Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

Nanotechnology

Volumn 21, Issue 4, 2010, Pages

  Wang, Yan ^a,b   Liu, Qi ^a   Long, Shibing ^a   Wang, Wei ^c   Wang, Qin ^a   Zhang, Manhong ^a   Zhang, Sen ^a   Li, Yingtao ^a,b   Zuo, Qingyun ^a   Yang, Jianhong ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b LANZHOU UNIVERSITY   (China)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CURRENT; CONDUCTING FILAMENT; DEVICE FABRICATIONS; FAST OPERATION; NON-VOLATILE MEMORY APPLICATION; RESISTANCE SWITCHING; RESISTANCE VALUES; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RETENTION TIME; ROOM TEMPERATURE; SANDWICHED STRUCTURE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TEST RESULTS;

HAFNIUM COMPOUNDS; SWITCHING SYSTEMS;

SWITCHING;

EID: 75249099294     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/4/045202     Document Type: Article

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