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Applied Physics Letters

Volumn 101, Issue 11, 2012, Pages

Switching dynamics and charge transport studies of resistive random access memory devices

(5) Long, Branden a Li, Yibo a Mandal, Saptarshi a Jha, Rashmi a Leedy, Kevin b

a Toledo (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CURRENT; FRENKEL-POOLE EMISSION; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OHMIC CONDUCTION; OXIDATION DYNAMICS; RESET VOLTAGE; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING DYNAMICS; TIME-SCALES; TRAP ASSISTED TUNNELING;

PHYSICAL PROPERTIES; PHYSICS;

DYNAMICS;

EID: 84866318727 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4749809 Document Type: Article

Times cited : (35)

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