Modeling of the hysteretic I-V characteristics of TiO2-based resistive switches using the generalized diode equation

IEEE Electron Device Letters

Volumn 35, Issue 3, 2014, Pages 390-392

  Blasco, Juli ^a   Ghenzi, Nestor ^b   Suae, Jordi ^a   Levy, Pablo ^b   Miranda, Enrique ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b DEPARTAMENTO DE FÍSICA   (Argentina)

Author keywords

MIM; Resistive switching

Indexed keywords

HYSTERESIS; NANOWIRES; SWITCHES; TITANIUM DIOXIDE;

ANTI-PARALLEL DIODES; HYSTERETIC BEHAVIOR; MIM; PARALLEL RESISTANCE; PARASITIC CONDUCTION; RESISTIVE SWITCHING; THRESHOLD FUNCTIONS; TIO;

DIODES;

EID: 84895926376     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2297992     Document Type: Article

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