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Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

Conduction mechanism of resistive switching films in MgO memory devices

(3) Chiu, Fu Chien a Shih, Wen Chieh b Feng, Jun Jea a

a MING CHUAN UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CURRENT; CONDUCTION MECHANISM; EFFECTIVE DENSITY OF STATE; ELECTRICAL PARAMETER; HIGH-RESISTANCE STATE; HOPPING CONDUCTION; LOW-RESISTANCE STATE; MGO; MGO FILMS; NON-POLAR; OHMIC CONDUCTION; RESET CURRENTS; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE SWITCHING; TRAP ENERGY LEVELS;

PHYSICAL PROPERTIES; PHYSICS;

ELECTRON MOBILITY;

EID: 84864231122 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4712628 Document Type: Article

Times cited : (55)

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