A simplified model for resistive switching of oxide-based resistive random access memory devices

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 306-308

  Lu, Yang ^a   Gao, Bin ^a   Fu, Yihan ^a   Chen, Bing ^a   Liu, Lifeng ^a   Liu, Xiaoyan ^a   Kang, Jinfeng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Conductive filament (CF); hafnium oxide; nonvolatile memory; RESET time; resistive random access memory (RRAM); resistive switching

Indexed keywords

CONDUCTIVE FILAMENT (CF); NON-VOLATILE MEMORIES; RESET TIME; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING;

HAFNIUM OXIDES; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84862785176     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2178229     Document Type: Article

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