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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

(3) Makarov, A a,b Sverdlov, V a Selberherr, S a

a VOLGOGRAD STATE TECHNICAL UNIVERSITY (Russian Federation)

b NONE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; EMPLOYMENT; METALS; MONTE CARLO METHODS; PROBABILITY DISTRIBUTIONS; RRAM; STOCHASTIC SYSTEMS; TEMPERATURE DISTRIBUTION;

ELECTRON OCCUPATION; HIGH ROBUSTNESS; HYSTERESIS CYCLES; INCREASING TEMPERATURES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING MECHANISMS; TEMPERATURE DEPENDENCE;

STOCHASTIC MODELS;

EID: 79551714975 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3521503 Document Type: Conference Paper

Times cited : (17)

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