Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 609-611

  Miranda, Enrique A ^a   Walczyk, Christian ^b   Wenger, Christian ^b   Schroeder, Thomas ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b Innovations for High Performance Microelectronics ^*  (Germany)

Author keywords

Dielectric breakdown; High k; Metal insulator metal (MIM)

Indexed keywords

ANALYTICAL MODEL; ATOMIC REARRANGEMENTS; CROSS SECTIONAL AREA; DIELECTRIC BREAKDOWNS; ELECTRON TRANSPORT; HIGH RESISTIVE STATE; LANDAUER; MESOSCOPIC SYSTEMS; METAL INSULATOR METALS; METAL-INSULATOR-METAL STRUCTURES; MIM STRUCTURE; NANO METER RANGE; PARAMETER VALUES; PHYSICS-BASED; RESISTIVE SWITCHING; SWITCHING PHENOMENON; TRANSMISSION PROPERTY;

ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING SYSTEMS;

SMELTING;

EID: 77953023010     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2046310     Document Type: Article

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