Impact of temperature on the resistive switching behavior of embedded HfO2-based RRAM devices

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3124-3131

  Walczyk, Christian ^a   Walczyk, Damian ^a   Schroeder, Thomas ^a   Bertaud, Thomas ^a   Sowińska, Małgorzata ^a   Lukosius, Mindaugas ^a   Fraschke, Mirko ^a   Wolansky, Dirk ^a   Tillack, Bernd ^a,b   Miranda, Enrique ^c   Wenger, Christian ^a  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Conduction process in virgin TiN HfO2 Ti TiN memory cells; resistance change random access memory (RRAM); temperature dependence of the off state and the on state

Indexed keywords

BACK END OF LINES; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; CONDUCTION MECHANISM; CONDUCTION PROCESS IN VIRGIN TIN/HFO2/TI/TIN MEMORY CELLS; CONFINEMENT POTENTIAL; CURRENT INCREASE; MEMORY CELL; METALLIC BEHAVIORS; OFF-STATE CURRENT; ON STATE CURRENT; POOLE-FRENKEL MECHANISMS; POSITIVELY CHARGED; RESISTANCE-CHANGE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING BEHAVIORS; SWITCHING BEHAVIORS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENCE OF THE OFF-STATE AND THE ON-STATE; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; TEMPERATURE RANGE; TRAP ENERGY LEVELS; TRAP LEVELS;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; HAFNIUM OXIDES; MOS DEVICES; OXYGEN VACANCIES; QUANTUM CHEMISTRY; QUANTUM THEORY; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; SWITCHING SYSTEMS; TEMPERATURE DISTRIBUTION;

MIM DEVICES;

EID: 80052097231     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2160265     Document Type: Article

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