Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Applied Physics Letters

Volumn 103, Issue 26, 2013, Pages

  Jiménez, David ^a   Miranda, Enrique ^a   Tsurumaki Fukuchi, Atsushi ^b   Yamada, Hiroyuki ^b,c   Suñé, Jordi ^a   Sawa, Akihito ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC DOMAINS; MULTI-LEVEL RECORDING; MULTILEVEL STORAGE; NON-VOLATILE MEMORY; RESISTANCE STATE; RESISTIVE SWITCHING; SCHOTTKY BARRIER HEIGHTS;

FERROELECTRICITY; IRON OXIDES; SWITCHING SYSTEMS;

NONVOLATILE STORAGE;

EID: 84891613994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4855155     Document Type: Article

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