Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments

Nanotechnology

Volumn 22, Issue 27, 2011, Pages

  Zhuge, Fei ^a,b   Peng, Shanshan ^a   He, Congli ^a   Zhu, Xiaojian ^a   Chen, Xinxin ^a   Liu, Yiwei ^a   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PROCESS; ELEVATED TEMPERATURE; GRAIN SIZE; INITIAL RESISTANCE; MEMORY DEVICE; N-DOPING; N-TYPE CONDUCTIVITY; P-TYPE DOPANT; PROGRAMMING SPEED; RANDOMICITY; RESISTIVE SWITCHING; STATE RESISTANCE; SWITCHING VOLTAGES; ZNO; ZNO FILMS;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS; ZINC OXIDE;

COPPER;

EID: 79957846221     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/27/275204     Document Type: Article

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