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Applied Physics Letters

Volumn 101, Issue 15, 2012, Pages

Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO 3

(1) Guo, Xin a,b

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL RESISTANCE; ELECTRICAL STRESS; ELECTROCHEMICAL PROCESS; INTERMEDIATE TEMPERATURES; MODEL SYSTEM; ORDERS OF MAGNITUDE; RESISTIVE SWITCHING; SCHOTTKY BARRIERS; SINGLE-CRYSTALLINE; SRTIO;

CRYSTALLINE MATERIALS; ELECTROCHEMISTRY; ELECTROFORMING; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; STRONTIUM TITANATES;

ELECTROMETALLURGY;

EID: 84867569586 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4759030 Document Type: Article

Times cited : (19)

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