Equivalent circuit model for the switching conduction characteristics of TiO2-based MIM structures

Proceedings of the International Conference on Microelectronics, ICM

Volumn , Issue , 2014, Pages 281-284

  Blasco, J ^a   Ghenzi, N ^b   Sune, J ^a   Levy, P ^b   Miranda, E ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b DEPARTAMENTO DE FÍSICA   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; MICROELECTRONICS; TITANIUM DIOXIDE;

ANTI-PARALLEL DIODES; EQUIVALENT CIRCUIT MODEL; EQUIVALENT ELECTRICAL CIRCUIT MODEL; HIGH-RESISTANCE STATE; METAL-INSULATOR-METAL STRUCTURES; PARALLEL RESISTANCE; PARASITIC CONDUCTION; THRESHOLD FUNCTIONS;

MIM DEVICES;

EID: 84904616989     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2014.6842143     Document Type: Conference Paper

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