Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Zhang, Lijie ^a,b   Hsu, Yen Ya ^b   Chen, Frederick T ^b   Lee, Heng Yuan ^b   Chen, Yu Sheng ^b   Chen, Wei Su ^b   Gu, Pei Yi ^b   Liu, Wen Hsing ^b   Wang, Shun Min ^b   Tsai, Chen Han ^b   Huang, Ru ^a   Tsai, Ming Jinn ^b  

^a PEKING UNIVERSITY   (China)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CONDUCTION CURRENT; EXPERIMENTAL INVESTIGATIONS; HIGH-RESISTANCE STATE; OXYGEN IONS; POTENTIAL WELLS; RETENTION TIME; SQUARE ROOTS; STRESS CURRENT; STRESS VOLTAGES; TEMPERATURE IMPACT; TIO; VOLTAGE ACCELERATION;

DEGRADATION; IMPACT RESISTANCE; OXYGEN; TITANIUM NITRIDE;

RELIABILITY;

EID: 79956121337     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254016     Document Type: Article

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