Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-9

  Chiu, Fu Chien ^a   Li, Peng Wei ^a   Chang, Wen Yuan ^b  

^a MING CHUAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Electrical parameters; Reliability; Resistive switching; ZnO

Indexed keywords

DURABILITY; ELECTRIC NETWORK PARAMETERS; METALLIC FILMS; RELIABILITY; ZINC OXIDE;

CONDUCTION MECHANISM; EFFECTIVE DENSITY OF STATE; ELECTRICAL PARAMETER; LOW-RESISTANCE STATE; RELIABILITY CHARACTERISTICS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; TRAP ENERGY LEVELS;

II-VI SEMICONDUCTORS;

EID: 84859376367     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-178     Document Type: Article

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