A SPICE compact model of metal oxide resistive switching memory with variations

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1405-1407

  Guan, Ximeng ^a   Yu, Shimeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Compact model; resistive random access memory (RRAM) conducting filament; resistive switching; temperature; variation

Indexed keywords

COMPACT MODEL; CONDUCTING FILAMENT; MEMORY CELL; METAL OXIDES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; TEMPERATURE CHANGES; TEMPORAL VARIATION; VARIATION;

METALLIC COMPOUNDS; TEMPERATURE;

NONVOLATILE STORAGE;

EID: 84866886745     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2210856     Document Type: Article

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