A comprehensive study of the resistive switching mechanism in Al/TiO x/TiO 2/Al-structured RRAM

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3049-3054

  Kim, Sungho ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Oxygen vacancy; Resistive random access memory (RRAM); Resistive switching; TiO x

Indexed keywords

COMPREHENSIVE STUDIES; CONDUCTION MECHANISM; ENERGY DISPERSIVE X-RAY; MEASURED DATA; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; TIO;

ALUMINUM; COMPUTER SIMULATION; OXYGEN; OXYGEN VACANCIES; SWITCHING SYSTEMS; TITANIUM DIOXIDE;

RANDOM ACCESS STORAGE;

EID: 77956032359     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032597     Document Type: Article

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