Resistive switching by voltage-driven ion migration in bipolar RRAMPart II: Modeling

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2468-2475

  Larentis, Stefano ^a   Nardi, Federico ^b   Balatti, Simone ^c   Gilmer, David C ^d   Ielmini, Daniele ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Intermolecular   (United States)

^c POLITECNICO DI MILANO   (Italy)

^d SEMATECH   (United States)

Author keywords

Insulator metal transition; memory modeling; nonvolatile memory (NVM); resistive switching; resistive switching memory (RRAM)

Indexed keywords

INSULATOR METAL TRANSITION; MEMORY MODELING; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES;

ELECTROFORMING; FLASH MEMORY; IONS; PARTIAL DIFFERENTIAL EQUATIONS; SWITCHING SYSTEMS; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 84865451112     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2202320     Document Type: Article

References (36)

1. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007. (Pubitemid 350064191)
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories: Nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Jul. 2009.
3. D. Ielmini, F. Nardi, and C. Cagli, "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories," Nanotechnology, vol. 22, no. 25, p. 254 022, Jun. 2011.
4. D. Ielmini, R. Bruchhaus, and R. Waser, "Thermochemical resistive switching: Materials, mechanisms, and scaling projections," Phase Transitions, vol. 84, no. 7, pp. 570-602, 2011.
5. C. Szot, W. Speier, G. Bihlmayer, and R. Waser, "Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3," Nat. Mater., vol. 5, no. 4, pp. 312-320, Apr. 2006.
6. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, "Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory," Adv. Mater., vol. 19, no. 17, pp. 2232-2235, Sep. 2007. (Pubitemid 47409283)
7. R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, and D. Rinerson, "Oxide dual-layer memory element for scalable non-volatile cross-point memory technology," in Proc. NVMTS, 2008, pp. 54-58.
8. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, no. 7191, pp. 80-83, May 2008. (Pubitemid 351630336)
9. D. B. Strukov, J. L. Borghetti, and R. S. Williams, "Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior," Small, vol. 5, no. 9, pp. 1058-1063, 2009.
10. D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament growth," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4309-4317, Dec. 2011.
11. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, "Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., 2004, pp. 587-590. (Pubitemid 40928360)
12. D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, and M. Fanciulli, "Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices," J. Appl. Phys., vol. 109, no. 3, p. 034 506, Feb. 2011.
13. F. Nardi, S. Larentis, S. Balatti, D. C. Gilmer, and D. Ielmini, "Resistive switching by voltage-driven ion migration in bipolar RRAM - Part I: Experimental study," IEEE Trans. Electron Devices, vol. 59, no. 9, pp. 2461- 2467, Sep. 2012.
14. J.-B. Yun, S. Kim, S. Seo, M.-J. Lee, D.-C. Kim, S.-E. Ahn, Y. Park, J. Kim, and H. Shin, "Random and localized resistive switching observation in Pt/NiO/Pt," Phys. Stat. Sol. (RRL), vol. 1, no. 6, pp. 280- 282, Nov. 2007.
15. D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, "Atomic structure of conducting nanofilaments in TiO2 resistive switching memory," Nat. Nanotechnol., vol. 5, no. 2, pp. 148- 153, Feb. 2010.
16. J. P. Strachan, M. D. Pickett, J. J. Yang, S. Aloni, A. L. D. Kilcoyne, G. Medeiros-Ribeiro, and R. S. Williams, "Direct identification of the conducting channels in a functioning memristive device," Adv. Mater., vol. 22, no. 32, pp. 3573-3577, Aug. 2010.
17. S. Yu, X. Guan, and H.-S. P. Wong, "On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization," in IEDM Tech. Dig., 2011, pp. 413-416.
18. S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, and R.Waser, "Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches," Adv. Funct. Mater., vol. 21, no. 23, pp. 4487-4492, Dec. 2011.
19. D. Ielmini, "Filamentary-switching model in RRAM for time, energy and scaling projections," in IEDM Tech. Dig., 2011, pp. 409-412.
20. S. Larentis, C. Cagli, F. Nardi, and D. Ielmini, "Filament diffusion model for simulating reset and retention processes in RRAM," in Proc. Microelectron. Eng., 2011, pp. 1119-1123.
21. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, andM. N. Kozicki, "Study of multilevel programming in programmable metallization cell (PMC) memory," IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1040- 1047, May 2009.
22. S. Yu and H.-S.Wong, "Compact modeling of conducting-bridge randomaccess memory (CBRAM)," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1352-1360, May 2011.
23. A. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967, ch. 3, pp. 36-37.
24. D. Ielmini, F. Nardi, and C. Cagli, "Universal reset characteristics of unipolar and bipolar metal-oxide RRAM," IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3246-3253, Oct. 2011.
25. S.-G. Park, B. Magyari-Köpe, and Y. Nishi, "Impact of oxygen vacancy ordering on the formation of a conductive filament in TiO2 for resistive switching memory," IEEE Electron Device Lett., vol. 32, no. 2, pp. 197- 199, Feb. 2011.
26. S. Zafar, H. Jagannathan, L. F. Edge, and D. Gupta, "Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films," Appl. Phys. Lett., vol. 98, no. 15, p. 152 903, Apr. 2011.
27. C. Walczyk, D. Walczyk, T. Schroeder, T. Bertaud, M. Sowinska, M. Lukosius, M. Fraschke, D. Wolansky, B. Tillack, E. Miranda, and C. Wenger, "Impact of temperature on the resistive switching behavior of embedded HfO2-based RRAM devices," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3124-3131, Sep. 2011.
28. M. A. Panzer, M. Shandalov, J. A. Rowlette, Y. Oshima, Y. W. Chen, P. C. McIntyre, and K. E. Goodson, "Thermal properties of ultrathin hafnium oxide gate dielectric films," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1269-1271, Dec. 2009.
29. N. D. Milosevic and K. D. Maglic, "Thermophysical properties of solid phase hafnium at high temperatures," Int. J. Thermophys., vol. 27, no. 2, pp. 530-553, Mar. 2006. (Pubitemid 44406959)
30. D. C. Gilmer, G. Bersuker, H.-Y. Park, C. Park, B. Butcher, W. Wang, P. D. Kirsch, and R. Jammy, "Effects of RRAM stack configuration on forming voltage and current overshoot," in Proc. IMW, 2011, pp. 123-126.
31. G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, and M. Nafría, "Metal oxide resistive memory switching mechanism based on conductive filament properties," J. Appl. Phys., vol. 110, no. 12, p. 124 518, Dec. 2011.
32. F. Nardi, S. Balatti, S. Larentis, and D. Ielmini, "Complementary switching in metal oxides: Toward diode-less crossbar RRAMs," in IEDM Tech. Dig., 2011, pp. 709-712.
33. D. Ielmini, F. Nardi, C. Cagli, and A. L. Lacaita, "Size-dependent retention time in NiO-based resistive switching memories," IEEE Electron Device Lett., vol. 31, no. 4, pp. 353-355, Apr. 2010.
34. C. Cagli, F. Nardi, and D. Ielmini, "Modeling of set/reset operations in NiO-based resistive-switching memory RRAM devices," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1712-1720, Aug. 2009.
35. J. Park, M. Jo, E. M. Bourim, J. Yoon, D.-J. Seong, J. Lee, W. Lee, and H. Hwang, "Investigation of state stability of low-resistance state in resistive memory," IEEE Electron Device Lett., vol. 31, no. 5, pp. 485-487, May 2010.
36. H. D. Lee, B. Magyari-Köpe, and Y. Nishi, "Model of metallic filament formation and rupture in NiO for unipolar switching," Phys. Rev. B, vol. 81, no. 19, p. 193 202, May 2010.