Quantum-size effects in hafnium-oxide resistive switching

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Long, Shibing ^a,b   Lian, Xiaojuan ^a   Cagli, Carlo ^c   Cartoixà, Xavier ^a   Rurali, Riccardo ^d   Miranda, Enrique ^a   Jiménez, David ^a   Perniola, Luca ^c   Liu, Ming ^b   Suñé, Jordi ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INSTITUTE OF MICROELECTRONICS   (China)

^c CEA LETI   (France)

^d INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; FIRST-PRINCIPLES CALCULATION; QUANTUM SIZE EFFECTS; RESISTIVE SWITCHING;

PHYSICAL PROPERTIES; PHYSICS;

HAFNIUM OXIDES;

EID: 84877771146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802265     Document Type: Article

References (23)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
2. M. Di Ventra and Y. V. Pershin, Mater. Today 14, 584 (2011). 10.1016/S1369-7021(11)70299-1
3. I. K. Yoo, B. S. Kang, S. E. Ahn, C. B. Lee, M. J. Lee, G. S. Park, and X. S. Li, IEEE Trans. Nanotechnol. 9, 131 (2010) 10.1109/TNANO.2010.2041670.
4. D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nature Nanotechnology 5, 148 (2011). 10.1038/nnano.2009.456
5. I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, Nanotechnology 22, 254003 (2011). 10.1088/0957-4484/22/25/254003
6. K. Szot, M. Rogala, W. Speier, Z. Klusek, A. Besmehn, and R. Waser, Nanotechnology 22, 254001 (2011). 10.1088/0957-4484/22/25/254001
7. D. Ielmini, R. Bruchhaus, and R. Waser, Phase Trans. 84, 570 (2011). 10.1080/01411594.2011.561478
8. N. Agraït, A. Levy-Yeyati, J. M. van Ruitenbeek, Phys. Rep. 377, 81 (2003). 10.1016/S0370-1573(02)00633-6
9. T. Schmidt, R. Martel, R. L. Sandstrom, and P. Avouris, Appl. Phys. Lett. 73, 2173 (1998). 10.1063/1.122413
10. E. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, IEEE Electron Device Lett. 31, 609 (2010). 10.1109/LED.2010.2046310
11. R. Degraeve, Ph. Roussel, L. Goux, D. Wouters, J. Kittl, L. Altimine, M. Jurczak, and G. Groseneken, Tech. Dig.-Int. Electron Devices Meet. 2010, 632. 10.1109/IEDM.2010.5703438
12. J. Suñé, E. Miranda, M. Nafria, and X. Aymerich, Tech. Dig.-Int. Electron Devices Meet. 1998, 191. 10.1109/IEDM.1998.746318
13. J. R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer, M. Kozicki, and N. Derhacobian, IEEE Electron Device Lett. 33, 257 (2012). 10.1109/LED.2011.2177803
14. X. Zhu, W. Su, Y. Liu, B. Hu, L. Pan, W. Lu, J. Zhang, and R.-W. Li, Adv. Mater. 24, 3941 (2012). 10.1002/adma.201201506
15. S. Tappertzhofen, I. Valov, and R. Waser, Nanotechnology 23, 145703 (2012). 10.1088/0957-4484/23/14/145703
16. D. Ielmini, F. Nardi, and C. Cagli, Nanotechnology 22, 254022 (2011). 10.1088/0957-4484/22/25/254022
17. J. M. Soler, E. Artacho, J. D. Gale, A. García, J. Junquera, P. Ordejón, and D. Sánchez-Portal, J. Phys.: Condens. Mater. 14, 2745 (2002). 10.1088/0953-8984/14/11/302
18. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
19. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002). 10.1103/PhysRevB.65.233106
20. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
21. M. Brandbyge, J.-L. Mozos, P. Ordejón, J. Taylor, and K. Stokbro, Phys. Rev. B 65, 165401 (2002). 10.1103/PhysRevB.65.165401
22. S.-G. Park, B. Magyari-Köpe, and Y. Nishi, Phys. Rev. B 82, 115109 (2010). 10.1103/PhysRevB.82.115109
23. N. F. Mott, Metal-Insulator Transitions, 2nd ed. (Taylor Francis, London, 1990).