Modeling for multilevel switching in oxide-based bipolar resistive memory

Nanotechnology

Volumn 23, Issue 22, 2012, Pages

  Hur, Ji Hyun ^a   Kim, Kyung Min ^a   Chang, Man ^a   Lee, Seung Ryul ^a   Lee, Dongsoo ^a   Lee, Chang Bum ^a   Lee, Myoung Jae ^a   Kim, Young Bae ^a   Kim, Chang Jung ^a   Chung, U In ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

PHYSICAL MODEL; RESET VOLTAGE; RESISTIVE MEMORIES; SWITCHING BEHAVIORS; SWITCHING CAPABILITY; TIME-SCALES;

SWITCHING; TANTALUM;

TANTALUM OXIDES;

EID: 84861073298     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/22/225702     Document Type: Article

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