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Volumn 96, Issue 26, 2010, Pages

Transition of stable rectification to resistive-switching in Ti/ TiO 2 /Pt oxide diode

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT; FORMING PROCESS; INTERFACE BARRIER; MEMORY DEVICE; RECTIFYING CHARACTERISTICS; SCHOTTKY BARRIERS; TIO;

EID: 77954345774     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457866     Document Type: Article
Times cited : (166)

References (11)
  • 3
    • 0032023345 scopus 로고    scopus 로고
    • x thin-film diodes
    • DOI 10.1063/1.121122, PII S0003695198010134
    • W. Y. Lee, D. Mauri, and C. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 72, 1584 (1998). 10.1063/1.121122 (Pubitemid 128671397)
    • (1998) Applied Physics Letters , vol.72 , Issue.13 , pp. 1584-1586
    • Lee, W.Y.1    Mauri, D.2    Hwang, C.3
  • 5
    • 77954338510 scopus 로고    scopus 로고
    • International Semiconductor Device Research Symposium, College Park, MD,.
    • J. -J. Huang, G. -L. Lin, C. -W. Kuo, W. -C. Chang, and T. -H. Hou, International Semiconductor Device Research Symposium, College Park, MD, 2009, p. 1.
    • (2009) , pp. 1
    • Huang, J.-J.1    Lin, G.-L.2    Kuo, C.-W.3    Chang, W.-C.4    Hou, T.-H.5
  • 10
    • 0036607024 scopus 로고    scopus 로고
    • 2 gate oxide in metal-oxide-semiconductor capacitors
    • DOI 10.1063/1.1473668
    • C. -W. Wang, S. -F. Chen, and G. -T. Chen, J. Appl. Phys. JAPIAU 0021-8979 91, 9198 (2002). 10.1063/1.1473668 (Pubitemid 34638040)
    • (2002) Journal of Applied Physics , vol.91 , Issue.11 , pp. 9198
    • Wang, C.-W.1    Chen, S.-F.2    Chen, G.-T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.