Observation of conductance quantization in oxide-based resistive switching memory

Advanced Materials

Volumn 24, Issue 29, 2012, Pages 3941-3946

  Zhu, Xiaojian ^a   Su, Wenjing ^a   Liu, Yiwei ^a   Hu, Benlin ^a   Pan, Liang ^a   Lu, Wei ^b   Zhang, Jiandi ^c   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b UNIVERSITY OF MICHIGAN   (United States)

^c LOUISIANA STATE UNIVERSITY   (United States)

Author keywords

oxide based sandwich; quantum conductance; resistive random access memory; resistive switching

Indexed keywords

ATOMIC SCALE; CONDUCTANCE QUANTIZATION; CONDUCTIVE FILAMENTS; DATA STORAGE; ELECTRICAL PARAMETER; MATERIALS SYSTEMS; ONE-DIMENSIONAL STRUCTURE; OXIDE MATRIX; OXIDE-BASED SANDWICH; QUANTUM CONDUCTANCE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES;

SWITCHING SYSTEMS;

NONVOLATILE STORAGE;

NANOMATERIAL; OXIDE;

ARTICLE; CHEMISTRY; NANOTECHNOLOGY; QUANTUM THEORY; SEMICONDUCTOR;

NANOSTRUCTURES; NANOTECHNOLOGY; OXIDES; QUANTUM THEORY; SEMICONDUCTORS;

EID: 84864409909     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201201506     Document Type: Article

References (30)

1. M. Lundstrom, Science 2003, 299, 210.
2. R. Waser, (ed.), Nanoelectronics and Information Technology, Wiley-VCH, Weinheim 2003.
3. K. Kim, G.-H. Koh, Proc. Int. Conf. Microelectronics, Nis, Serbia 2004, May.
4. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hui, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, K. Kim, Nat. Mater. 2011, 10, 625.
5. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
6. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 2006, 5, 312.
7. S.-J. Choi, G.-S. Park, K.-H. Kim, S. Cho, W.-Y. Yang, X.-S. Li, J.-H. Moon, K.-J. Lee, K. Kim, Adv. Mater. 2011, 23, 3272.
8. Z. Xu, Y. Bando, W. Wang, X. Bai, D. Golberg, ACS Nano 2010, 4, 2515.
9. S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D.-W. Kim, C. U. Jung, S. Seo, M.-J. Lee, T. W. Noh, Adv. Mater. 2008, 20, 1154.
10. J. Y. Son, Y.-H. Shin, Appl. Phys. Lett. 2008, 92, 222106.
11. K. Takayanagi, JSAP International 2001, 3, 3.
12. C. J. Muller, M. A. Reed, Science 1996, 272, 1901.
13. H. Ohnishi, Y. Kondo, K. Takayanagi, Nature 1998, 395, 780.
14. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Nature 2005, 433, 47.
15. R. Muenstermann, T. Menke, R. Dittmann, R. Waser, Adv. Mater. 2010, 22, 4819.
16. R. Waser, Microelectron. Eng. 2009, 86, 1925.
17. C. Schindler, G. Staikov, R. Waser, Appl. Phys. Lett. 2009, 94, 072109.
18. Y. C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 2009, 9, 1636.
19. Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, M. Liu, ACS Nano 2010, 4, 6162.
20. T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Nanotechology 2010, 21, 425205.
21. C. Untiedt, D. M. T. Dekker, D. Djukic, J. M. van Ruitenbeek, Phys. Rev. B 2004, 69, 081401.
22. C. Z. Li, H. X. He, A. Bogozi, J. S. Bunch, N. J. Tao, Appl. Phys. Lett. 2000, 76, 1333.
23. M. Kiguchi, T. Konishi, K. Murakoshi, Phys. Rev. B 2006, 73, 125406.
24. Sz. Csonka, A. Halbritter, G. Mihaly, E. Jurdik, O. I. Shklyarevskii, S. Speller, H. V. Kempen, Phys. Rev. Lett. 2003, 90, 116803.
25. C. Shu, C. Z. Li, H. X. He, A. Bogozi, J. S. Bunch, N. J. Tao, Phys. Rev. Lett. 2000, 84, 5198.
26. W. A. de Herr, S. Frank, D. Ugarte, Z. Phys. B 1997, 104, 469.
27. J. W. Seo, J.-W. Park, K. S. Lim, J.-H. Yang, S. J. Kang, Appl. Phys. Lett. 2008, 93, 223505.
28. D.-K. Kim, D.-S. Suh, J. Park, IEEE Electron Dev. Lett. 2010, 31, 600.
29. M. D. Pickett, J. Borghetti, J. J. Yang, G. Medeiros-Ribeiro, R. S. Williams, Adv. Mater. 2011, 23, 1730.
30. Y. Li, S. Long, H. Lv, Q. Liu, W. Wang, Q. Wang, Z. Huo, Y. Wang, S. Zhang, S. Liu, M. Liu, IEEE Electron Dev. Lett. 2011, 32, 363.