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Volumn 14, Issue 8, 2014, Pages 4360-4367

Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon

Author keywords

multilevel resistive switching; nanofilament; Quantized conductance; single crystal; titanium dioxide; valence change memory

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; QUANTUM ELECTRONICS; SILICON; SINGLE CRYSTALS; SWITCHING SYSTEMS; THIN FILMS;

EID: 84906074410     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl501249q     Document Type: Article
Times cited : (133)

References (47)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.