-
1
-
-
0001331485
-
-
0003-6951, 10.1063/1.126902
-
A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 0003-6951 77, 139 (2000). 10.1063/1.126902
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 139
-
-
Beck, A.1
Bednorz, J.G.2
Gerber, Ch.3
Rossel, C.4
Widmer, D.5
-
2
-
-
19944434155
-
Reproducible resistance switching in polycrystalline NiO films
-
DOI 10.1063/1.1831560
-
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 0003-6951 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.23
, pp. 5655-5657
-
-
Seo, S.1
Lee, M.J.2
Seo, D.H.3
Jeoung, E.J.4
Suh, D.-S.5
Joung, Y.S.6
Yoo, I.K.7
Hwang, I.R.8
Kim, S.H.9
Byun, I.S.10
Kim, J.-S.11
Choi, J.S.12
Park, B.H.13
-
3
-
-
23944447615
-
2 thin films grown by atomic-layer deposition
-
DOI 10.1063/1.2001146, 033715
-
B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 0021-8979 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
-
(2005)
Journal of Applied Physics
, vol.98
, Issue.3
, pp. 1-10
-
-
Choi, B.J.1
Jeong, D.S.2
Kim, S.K.3
Rohde, C.4
Choi, S.5
Oh, J.H.6
Kim, H.J.7
Hwang, C.S.8
Szot, K.9
Waser, R.10
Reichenberg, B.11
Tiedke, S.12
-
4
-
-
29244487117
-
High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs
-
DOI 10.1109/LED.2005.859625
-
D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M. -J. Lee, S. -A. Seo, and I. K. Yoo, IEEE Electron Device Lett. 0741-3106 26, 719 (2005). 10.1109/LED.2005.859625 (Pubitemid 41825089)
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.12
, pp. 900-902
-
-
Lee, Y.1
Bae, S.2
Fonash, S.J.3
-
5
-
-
0000748226
-
-
0003-6951, 10.1063/1.126464
-
S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 0003-6951 76, 2749 (2000). 10.1063/1.126464
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2749
-
-
Liu, S.Q.1
Wu, N.J.2
Ignatiev, A.3
-
6
-
-
21644443347
-
-
0163-1918.
-
I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. -In. Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2004, 587.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2004
, pp. 587
-
-
Baek, I.G.1
Lee, M.S.2
Seo, S.3
Lee, M.J.4
Seo, D.H.5
Suh, S.6
Park, J.C.7
Park, S.O.8
Kim, H.S.9
Yoo, I.K.10
Chung, U.-In.11
Moon, J.T.12
-
7
-
-
34547502147
-
-
0163-1918.
-
T. N. Fang, S. Kaza, S. Haddad, A. Chen, Y. C. Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi, S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2006, 789.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2006
, pp. 789
-
-
Fang, T.N.1
Kaza, S.2
Haddad, S.3
Chen, A.4
Wu, Y.C.5
Lan, Z.6
Avanzino, S.7
Liao, D.8
Gopalan, C.9
Choi, S.10
Mahdavi, S.11
Buynoski, M.12
Lin, Y.13
Marrian, C.14
Bill, C.15
Vanbuskirk, M.16
Taguchi, M.17
-
8
-
-
33846592732
-
-
0163-1918.
-
A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 765.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2005
, pp. 765
-
-
Chen, A.1
Haddad, S.2
Wu, Y.C.3
Fang, T.N.4
Lan, Z.5
Avanzino, S.6
Pangrle, S.7
Buynoski, M.8
Rathor, M.9
Cai, W.10
Tripsas, N.11
Bill, C.12
Vanbuskirk, M.13
Taguchi, M.14
-
9
-
-
50249156872
-
-
0163-1918.
-
K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Jizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 767.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2007
, pp. 767
-
-
Tsunoda, K.1
Kinoshita, K.2
Noshiro, H.3
Yamazaki, Y.4
Jizuka, T.5
Ito, Y.6
Takahashi, A.7
Okano, A.8
Sato, Y.9
Fukano, T.10
Aoki, M.11
Sugiyama, Y.12
-
10
-
-
22144448904
-
2 thin films
-
DOI 10.1063/1.1968416, 262907
-
C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. -S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 0003-6951 86, 262907 (2005). 10.1063/1.1968416 (Pubitemid 40983220)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.26
, pp. 1-3
-
-
Rohde, C.1
Choi, B.J.2
Jeong, D.S.3
Choi, S.4
Zhao, J.-S.5
Hwang, C.S.6
-
11
-
-
33947326575
-
2 films
-
DOI 10.1063/1.2712777
-
K. Tsunoda, Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffin, and Y. Nishi, Appl. Phys. Lett. 0003-6951 90, 113501 (2007). 10.1063/1.2712777 (Pubitemid 46439844)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.11
, pp. 113501
-
-
Tsunoda, K.1
Fukuzumi, Y.2
Jameson, J.R.3
Wang, Z.4
Griffin, P.B.5
Nishi, Y.6
-
12
-
-
51949093158
-
-
0743-1562.
-
N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562 2008, 100.
-
Dig. Tech. Pap. - Symp. VLSI Technol.
, vol.2008
, pp. 100
-
-
Xu, N.1
Gao, B.2
Liu, L.F.3
Sun, B.4
Liu, X.Y.5
Han, R.Q.6
Kang, J.F.7
Yu, B.8
-
13
-
-
78650878612
-
-
0163-1918.
-
D. Lee, D. Seong, H. Choi, I. A. Jo, R. Dong, W. Xiang, S. Oh, M. Pyun, S. Seo, S. Heo, M. Jo, D. Hwang, H. K. Park, M. Chang, M. Hasan, and H. Hwang, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 796.
-
Tech. Dig. - Int. Electron Devices Meet.
, vol.2007
, pp. 796
-
-
Lee, D.1
Seong, D.2
Choi, H.3
Jo, I.A.4
Dong, R.5
Xiang, W.6
Oh, S.7
Pyun, M.8
Seo, S.9
Heo, S.10
Jo, M.11
Hwang, D.12
Park, H.K.13
Chang, M.14
Hasan, M.15
Hwang, H.16
-
14
-
-
48249129194
-
-
0003-6951, 10.1063/1.2959065
-
K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. 0003-6951 93, 033506 (2008). 10.1063/1.2959065
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 033506
-
-
Kinoshita, K.1
Tsunoda, K.2
Sato, Y.3
Noshiro, H.4
Yagaki, S.5
Aoki, M.6
Sugiyama, Y.7
-
15
-
-
52349112530
-
-
0003-6951, 10.1063/1.2982426
-
H. Shima, F. Takano, H. Muramatsu, H. Akinaga, Y. Tamai, I. H. Inque, and H. Takagi, Appl. Phys. Lett. 0003-6951 93, 113504 (2008). 10.1063/1.2982426
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 113504
-
-
Shima, H.1
Takano, F.2
Muramatsu, H.3
Akinaga, H.4
Tamai, Y.5
Inque, I.H.6
Takagi, H.7
-
16
-
-
38049068338
-
-
0003-6951, 10.1063/1.2828864
-
A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, S. Kaza, and Z. Lan, Appl. Phys. Lett. 0003-6951 92, 013503 (2008). 10.1063/1.2828864
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 013503
-
-
Chen, A.1
Haddad, S.2
Wu, Y.C.3
Fang, T.N.4
Kaza, S.5
Lan, Z.6
-
17
-
-
27744575915
-
Parasitic reset in the programming transient of PCMs
-
DOI 10.1109/LED.2005.857719
-
D. Ielmini, D. Mantegazza, A. L. Lacaita, A. Pirovano, and F. Pellizzer, IEEE Electron Device Lett. 0741-3106 26, 799 (2005). 10.1109/LED.2005.857719 (Pubitemid 41622525)
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.11
, pp. 799-801
-
-
Ielmini, D.1
Mantegazza, D.2
Lacaita, A.L.3
Pirovano, A.4
Pellizzer, F.5
-
18
-
-
60349087905
-
-
0003-6951, 10.1063/1.3081401
-
D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett. 0003-6951 94, 063511 (2009). 10.1063/1.3081401
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 063511
-
-
Ielmini, D.1
Cagli, C.2
Nardi, F.3
-
19
-
-
78650865225
-
-
L. F. Liu, X. Sun, B. Sun, J. F. Kang, Y. Wang, X. Y. Liu, R. Q. Han, and G. C. Xiong, IEEE International Memory Workshop, 2009.
-
(2009)
IEEE International Memory Workshop
-
-
Liu, L.F.1
Sun, X.2
Sun, B.3
Kang, J.F.4
Wang, Y.5
Liu, X.Y.6
Han, R.Q.7
Xiong, G.C.8
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