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Volumn 113, Issue 11, 2013, Pages

Intrinsic nanofilamentation in resistive switching

(9) Wu, Xing a,b Cha, Dongkyu c Bosman, Michel d Raghavan, Nagarajan e Migas, Dmitri B f Borisenko, Victor E f Zhang, Xi Xiang c Li, Kun c Pey, Kin Leong a

a SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN (Singapore)

b Southeast University (China)

c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

e NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

f BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; ELECTRONIC APPLICATION; IN-SITU TRANSMISSION ELECTRON MICROSCOPIES; METAL-INSULATOR-METAL STRUCTURES; PHYSICAL STRUCTURES; RESISTIVE SWITCHING; SEMICONDUCTOR STRUCTURE; THREE ORDERS OF MAGNITUDE;

DATA STORAGE EQUIPMENT; HAFNIUM OXIDES; MIS DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

SWITCHING SYSTEMS;

EID: 84875728278 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4794519 Document Type: Article

Times cited : (73)

References (39)

1
- 0000091193
- 10.1088/0034-4885/33/3/306
- G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 33, 1129 (1970). 10.1088/0034-4885/33/3/306
- (1970) Rep. Prog. Phys. , vol.33 , pp. 1129
- Dearnaley, G.¹ Stoneham, A.M.² Morgan, D.V.³

2
- 43549126477
- 10.1016/S1369-7021(08)70119-6
- A. Sawa, Mater. Today 11 (6), 28-36 (2008). 10.1016/S1369-7021(08)70119-6
- (2008) Mater. Today , vol.11 , Issue.6 , pp. 28-36
- Sawa, A.¹

3
- 72949116562
- 10.1109/LED.2009.2034670
- H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M. J. Tsai, and C. Lien, IEEE Electron Device Lett. 31 (1), 44-46 (2010). 10.1109/LED.2009.2034670
- (2010) IEEE Electron Device Lett. , vol.31 , Issue.1 , pp. 44-46
- Lee, H.Y.¹ Chen, Y.S.² Chen, P.S.³ Wu, T.Y.⁴ Chen, F.⁵ Wang, C.C.⁶ Tzeng, P.J.⁷ Tsai, M.J.⁸ Lien, C.⁹

4
- 55449122987
- 10.1147/rd.524.0449
- G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, and R. S. Shenoy, IBM J. Res. Dev. 52 (4-5), 449-464 (2008). 10.1147/rd.524.0449
- (2008) IBM J. Res. Dev. , vol.52 , Issue.45 , pp. 449-464
- Burr, G.W.¹ Kurdi, B.N.² Scott, J.C.³ Lam, C.H.⁴ Gopalakrishnan, K.⁵ Shenoy, R.S.⁶

5
- 41149099157
- 10.1126/science.1153909
- G. I. Meijer, Science 319 (5870), 1625-1626 (2008). 10.1126/science. 1153909
- (2008) Science , vol.319 , Issue.5870 , pp. 1625-1626
- Meijer, G.I.¹

6
- 77950284071
- 10.1126/science.1182541
- H. Takagi and H. Y. Hwang, Science 327 (5973), 1601-1602 (2010). 10.1126/science.1182541
- (2010) Science , vol.327 , Issue.5973 , pp. 1601-1602
- Takagi, H.¹ Hwang, H.Y.²

7
- 78049340534
- 10.1021/nn1017582
- Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, and M. Liu, ACS Nano 4 (10), 6162-6168 (2010). 10.1021/nn1017582
- (2010) ACS Nano , vol.4 , Issue.10 , pp. 6162-6168
- Liu, Q.¹ Long, S.² Lv, H.³ Wang, W.⁴ Niu, J.⁵ Huo, Z.⁶ Chen, J.⁷ Liu, M.⁸

8
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, C. Staikov, and K. Szot, Adv. Mater. 21 (25-26), 2632-2663 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , Issue.2526 , pp. 2632-2663
- Waser, R.¹ Dittmann, R.² Staikov, C.³ Szot, K.⁴

9
- 71649092208
- 10.1016/j.sse.2009.09.034
- C. Kügeler, M. Meier, R. Rosezin, S. Gilles, and R. Waser, Solid-State Electron. 53 (12), 1287-1292 (2009). 10.1016/j.sse.2009.09.034
- (2009) Solid-State Electron. , vol.53 , Issue.12 , pp. 1287-1292
- Kügeler, C.¹ Meier, M.² Rosezin, R.³ Gilles, S.⁴ Waser, R.⁵

10
- 77952942487
- 10.1021/nn100483a
- Z. Xu, Y. Bando, W. Wang, X. Bai, and D. Golberg, ACS Nano 4 (5), 2515-2522 (2010). 10.1021/nn100483a
- (2010) ACS Nano , vol.4 , Issue.5 , pp. 2515-2522
- Xu, Z.¹ Bando, Y.² Wang, W.³ Bai, X.⁴ Golberg, D.⁵

11
- 20444372632
- 10.1109/TNANO.2005.846936
- M. N. Kozicki, M. Park, and M. Mitkova, IEEE Trans. Nanotechnol. 4 (3), 331-338 (2005). 10.1109/TNANO.2005.846936
- (2005) IEEE Trans. Nanotechnol. , vol.4 , Issue.3 , pp. 331-338
- Kozicki, M.N.¹ Park, M.² Mitkova, M.³

12
- 76649133422
- 10.1038/nnano.2009.456
- D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 5 (2), 148-153 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , Issue.2 , pp. 148-153
- Kwon, D.H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.S.⁷ Park, G.S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

13
- 65249161894
- 10.1021/nl803387q
- M. J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S. E. Ahn, K. H. Kim, C. B. Lee, C. J. Kim, I. K. Yoo, D. H. Seo, X. S. Li, J. B. Park, J. H. Lee, and Y. Park, Nano Lett. 9 (4), 1476-1481 (2009). 10.1021/nl803387q
- (2009) Nano Lett. , vol.9 , Issue.4 , pp. 1476-1481
- Lee, M.J.¹ Han, S.² Jeon, S.H.³ Park, B.H.⁴ Kang, B.S.⁵ Ahn, S.E.⁶ Kim, K.H.⁷ Lee, C.B.⁸ Kim, C.J.⁹ Yoo, I.K.¹⁰ Seo, D.H.¹¹ Li, X.S.¹² Park, J.B.¹³ Lee, J.H.¹⁴ Park, Y.¹⁵

14
- 34147108217
- 10.1103/PhysRevLett.98.146403
- Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 98 (14), 146403 (2007). 10.1103/PhysRevLett.98.146403
- (2007) Phys. Rev. Lett. , vol.98 , Issue.14 , pp. 146403
- Nian, Y.B.¹ Strozier, J.² Wu, N.J.³ Chen, X.⁴ Ignatiev, A.⁵

15
- 77955878095
- 10.1021/nn100323x
- J. Y. Son, C. H. Kim, J. H. Cho, Y.-H. Shin, and H. M. Jang, ACS Nano 4 (6), 3288-3292 (2010). 10.1021/nn100323x
- (2010) ACS Nano , vol.4 , Issue.6 , pp. 3288-3292
- Son, J.Y.¹ Kim, C.H.² Cho, J.H.³ Shin, Y.-H.⁴ Jang, H.M.⁵

16
- 79951959814
- 10.1109/LED.2010.2099096
- N. Raghavan, K. L. Pey, X. Wu, W. H. Liu, X. Li, M. Bosman, and T. Kauerauf, IEEE Electron Device Lett. 32 (3), 252-254 (2011). 10.1109/LED.2010.2099096
- (2011) IEEE Electron Device Lett. , vol.32 , Issue.3 , pp. 252-254
- Raghavan, N.¹ Pey, K.L.² Wu, X.³ Liu, W.H.⁴ Li, X.⁵ Bosman, M.⁶ Kauerauf, T.⁷

17
- 0018334945
- 10.1007/BF00890544
- G. A. Vorobev and N. S. Nesmelov, Sov. Phys. J. 22 (1), 70-80 (1979). 10.1007/BF00890544
- (1979) Sov. Phys. J. , vol.22 , Issue.1 , pp. 70-80
- Vorobev, G.A.¹ Nesmelov, N.S.²

18
- 59849127081
- 10.1109/TED.2008.2010584
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 56 (2), 193-200 (2009). 10.1109/TED.2008.2010584
- (2009) IEEE Trans. Electron Devices , vol.56 , Issue.2 , pp. 193-200
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

19
- 59849099356
- 10.1109/TED.2008.2010583
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 56 (2), 186-192 (2009). 10.1109/TED.2008.2010583
- (2009) IEEE Trans. Electron Devices , vol.56 , Issue.2 , pp. 186-192
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

20
- 77952344995
- in. Technical Digest
- X. Li, C. H. Tung, K. L. Pey, and V. L. Lo, in Proceedings of International Electron Devices Meeting-IEDM. Technical Digest (2008), pp. 779-782.
- (2008) Proceedings of International Electron Devices Meeting - IEDM , pp. 779-782
- Li, X.¹ Tung, C.H.² Pey, K.L.³ Lo, V.L.⁴

21
- 65249125383
- 10.1021/nl900006g
- Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9 (4), 1636-1643 (2009). 10.1021/nl900006g
- (2009) Nano Lett. , vol.9 , Issue.4 , pp. 1636-1643
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

22
- 34250327548
- 10.1149/1.2742989
- D. S. Jeong, H. Schroeder, and R. Waser, Electrochem. Solid-State Lett. 10 (8), G51-G53 (2007). 10.1149/1.2742989
- (2007) Electrochem. Solid-State Lett. , vol.10 , Issue.8
- Jeong, D.S.¹ Schroeder, H.² Waser, R.³

23
- 0029310051
- 10.1109/16.381988
- T. Morimoto, T. Ohguro, S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices 42 (5), 915-922 (1995). 10.1109/16.381988
- (1995) IEEE Trans. Electron Devices , vol.42 , Issue.5 , pp. 915-922
- Morimoto, T.¹ Ohguro, T.² Momose, S.³ Iinuma, T.⁴ Kunishima, I.⁵ Suguro, K.⁶ Katakabe, I.⁷ Nakajima, H.⁸ Tsuchiaki, M.⁹ Ono, M.¹⁰ Katsumata, Y.¹¹ Iwai, H.¹²

24
- 43049126833
- 10.1038/nature06932
- D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453 (7191), 80-83 (2008). 10.1038/nature06932
- (2008) Nature , vol.453 , Issue.7191 , pp. 80-83
- Strukov, D.B.¹ Snider, G.S.² Stewart, D.R.³ Williams, R.S.⁴

25
- 84874087343
- 10.1063/1.4790837
- J. Sun, Q. Liu, H. Xie, X. Wu, F. Xu, T. Xu, S. Long, H. Lv, Y. Li, L. Sun, and M. Liu, Appl. Phys. Lett. 102, 053502 (2013). 10.1063/1.4790837
- (2013) Appl. Phys. Lett. , vol.102 , pp. 053502
- Sun, J.¹ Liu, Q.² Xie, H.³ Wu, X.⁴ Xu, F.⁵ Xu, T.⁶ Long, S.⁷ Lv, H.⁸ Li, Y.⁹ Sun, L.¹⁰ Liu, M.¹¹

26
- 0036712468
- 10.1109/LED.2002.802662
- C. H. Tung, K. L. Pey, W. H. Lin, and M. K. Radhakrishnan, IEEE Electron Device Lett. 23 (9), 526-528 (2002). 10.1109/LED.2002.802662
- (2002) IEEE Electron Device Lett. , vol.23 , Issue.9 , pp. 526-528
- Tung, C.H.¹ Pey, K.L.² Lin, W.H.³ Radhakrishnan, M.K.⁴

27
- 79958049430
- 10.1016/j.mee.2011.03.012
- K. L. Pey, N. Raghavan, X. Wu, W. Liu, X. Li, M. Bosman, K. Shubhakar, Z. Z. Lwin, Y. Chen, H. Qin, and T. Kauerauf, Microelectron. Eng. 88 (7), 1365-1372 (2011). 10.1016/j.mee.2011.03.012
- (2011) Microelectron. Eng. , vol.88 , Issue.7 , pp. 1365-1372
- Pey, K.L.¹ Raghavan, N.² Wu, X.³ Liu, W.⁴ Li, X.⁵ Bosman, M.⁶ Shubhakar, K.⁷ Lwin, Z.Z.⁸ Chen, Y.⁹ Qin, H.¹⁰ Kauerauf, T.¹¹

28
- 50249179601
- 10.1063/1.2974792
- X. Li, C. H. Tung, and K. L. Pey, Appl. Phys. Lett. 93 (7), 072903 (2008). 10.1063/1.2974792
- (2008) Appl. Phys. Lett. , vol.93 , Issue.7 , pp. 072903
- Li, X.¹ Tung, C.H.² Pey, K.L.³

29
- 58149236521
- 10.1063/1.3056659
- X. Li, C. H. Tung, and K. L. Pey, Appl. Phys. Lett. 93 (26), 262902 (2008). 10.1063/1.3056659
- (2008) Appl. Phys. Lett. , vol.93 , Issue.26 , pp. 262902
- Li, X.¹ Tung, C.H.² Pey, K.L.³

30
- 64149110849
- 10.1063/1.3114410
- X. Li, C. H. Tung, K. L. Pey, and V. L. Lo, Appl. Phys. Lett. 94 (13), 132904 (2009). 10.1063/1.3114410
- (2009) Appl. Phys. Lett. , vol.94 , Issue.13 , pp. 132904
- Li, X.¹ Tung, C.H.² Pey, K.L.³ Lo, V.L.⁴

31
- 84875701400
- in
- K. L. Pey, X. Wu, W. H. Liu, X. Li, N. Raghavan, K. Shubhakar, M. Bosman, in IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (2010), pp. 1-12.
- (2010) IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) , pp. 1-12
- Pey, K.L.¹ Wu, X.² Liu, W.H.³ Li, X.⁴ Raghavan, N.⁵ Shubhakar, K.⁶ Bosman, M.⁷

32
- 0034698297
- 10.1126/science.289.5478.422
- F. J. Giessibl, S. Hembacher, H. Bielefeldt, and J. Mannhart, Science 289 (5478), 422-425 (2000). 10.1126/science.289.5478.422
- (2000) Science , vol.289 , Issue.5478 , pp. 422-425
- Giessibl, F.J.¹ Hembacher, S.² Bielefeldt, H.³ Mannhart, J.⁴

33
- 59649091849
- Suppl. S02, 10.1017/S1431927605509632
- K.-S. Ko, S. Crank, P. Chen, D. Yue, S. Lavangkul, H. Mogul, S. Siddiqui, and T. Bonifield, Microsc. Microanal. 11, Suppl. S02, 2096-2097 (2005). 10.1017/S1431927605509632
- (2005) Microsc. Microanal. , vol.11 , pp. 2096-2097
- Ko, K.-S.¹ Crank, S.² Chen, P.³ Yue, D.⁴ Lavangkul, S.⁵ Mogul, H.⁶ Siddiqui, S.⁷ Bonifield, T.⁸

34
- 2342625952
- 10.1109/TDMR.2004.824374
- L. J. Tang, K. L. Pey, C. H. Tung, M. K. Radhakrishnan, and W. H. Lin, IEEE Trans. Device Mater. Reliab. 4 (1), 38-45 (2004). 10.1109/TDMR.2004.824374
- (2004) IEEE Trans. Device Mater. Reliab. , vol.4 , Issue.1 , pp. 38-45
- Tang, L.J.¹ Pey, K.L.² Tung, C.H.³ Radhakrishnan, M.K.⁴ Lin, W.H.⁵

35
- 84875713551
- in. Technical Digest
- R. Ranjan, K. Pey, C. Tung, D. Ang, L. Tang, T. Kauerauf, R. Degraeve, G. Groeseneken, S. De Gendt, and L. Bera, in Proceedings of International Electron Devices Meeting-IEDM. Technical Digest (2006), pp. 259-262.
- (2006) Proceedings of International Electron Devices Meeting - IEDM , pp. 259-262
- Ranjan, R.¹ Pey, K.² Tung, C.³ Ang, D.⁴ Tang, L.⁵ Kauerauf, T.⁶ Degraeve, R.⁷ Groeseneken, G.⁸ De Gendt, S.⁹ Bera, L.¹⁰

36
- 2442537377
- 10.1103/PhysRevB.54.11169
- G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
- (1996) Phys. Rev. B , vol.54 , pp. 11169
- Kresse, G.¹ Furthmüller, J.²

37
- 0030190741
- 10.1016/0927-0256(96)00008-0
- G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996). 10.1016/0927-0256(96)00008-0
- (1996) Comput. Mater. Sci. , vol.6 , pp. 15
- Kresse, G.¹ Furthmüller, J.²

38
- 27744460065
- 10.1103/PhysRevB.49.14251
- G. Kresse and J. Hafner, Phys. Rev. B 49, 14251 (1994). 10.1103/PhysRevB.49.14251
- (1994) Phys. Rev. B , vol.49 , pp. 14251
- Kresse, G.¹ Hafner, J.²

39
- 19944434155
- 10.1063/1.1831560
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 85 (23), 5655-5657 (2004). 10.1063/1.1831560
- (2004) Appl. Phys. Lett. , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.S.¹¹ Choi, J.S.¹² Park, B.H.¹³

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