Pulse-induced low-power resistive switching in Hf O2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Walczyk, Ch ^a   Wenger, Ch ^a   Sohal, R ^a   Lukosius, M ^a   Fox, A ^a   Dbrowski, J ^a   Wolansky, D ^a   Tillack, B ^a,b   Mussig H J ^a   Schroeder, T ^a  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION PROCESS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRIC PULSE; FORMING PROCESS; LOW POWER; METAL INSULATOR METALS; METAL-INSULATOR-METAL STRUCTURES; NON-VOLATILE MEMORY APPLICATION; NONDESTRUCTIVE READOUT; POOLE-FRENKEL EFFECT; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RETENTION TIME; TRAP ENERGY LEVELS;

ELECTRON MOBILITY; HAFNIUM; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SMELTING; SWITCHING; SWITCHING SYSTEMS; TITANIUM COMPOUNDS; TITANIUM NITRIDE; VOLTAGE MEASUREMENT;

STRUCTURAL METALS;

EID: 67649538428     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3139282     Document Type: Article

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