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Applied Physics A: Materials Science and Processing

Volumn 97, Issue 4, 2009, Pages 883-887

Effects of the compliance current on the resistive switching behavior of TiO2 thin films

(7) Cao, X a,b Li, X M a Gao, X D a Zhang, Y W a,b Liu, X J a Wang, Q a Chen, L D a

a SHANGHAI INSTITUTE OF CERAMICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CURRENT; CONDUCTING BEHAVIOR; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NANOCRYSTALLINE TIO; NON-VOLATILE MEMORY APPLICATION; PT(111); RESET CURRENTS; RESISTANCE CHANGE; RESISTIVE SWITCHING BEHAVIORS; SI SUBSTRATES; SWITCHING BEHAVIORS; THERMAL OXIDATION; TI FILM; TIO;

PLATINUM; SWITCHING SYSTEMS; THIN FILMS; TITANIUM;

SWITCHING;

EID: 70450278835 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5351-7 Document Type: Article

Times cited : (60)

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