Electrical current distribution across a metal-insulator-metal structure during bistable switching

Journal of Applied Physics

Volumn 90, Issue 6, 2001, Pages 2892-2898

  Rossel, C ^a   Meijer, G I ^a   Bremaud D ^a   Widmer, D ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035883782     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1389522     Document Type: Article

References (35)

1. S. R. Ovshinsky, Phys. Rev. Lett. 36, 1469 (1968).
2. R. G. Neale and J. A. Aseltine, IEEE Trans. Electron Devices 20, 195 (1973).
3. J. F. Dewald, A. D Pearson, W. R. Northover, and W. F. Peck, Jr., J. Electrochem. Soc. 109, 243c (1962).
4. H. J. Hovel and J. J. Urgell, J. Appl. Phys. 42, 5076 (1971).
5. W. R. Hiatt and T. W. Hickmott, Appl. Phys. Lett. 6, 106 (1965).
6. T. W. Hickmott, J. Vac. Sci. Technol. 6, 828 (1969).
7. K. L. Chopra, J. Appl. Phys. 36, 184 (1965).
8. F. Argall, Solid-State Electron. 11, 535 (1968).
9. J. F. Gibbons and W. E. Beadle, Solid-State Electron. 7, 785 (1964).
10. K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).
11. H. J. Gao, K. Sohlberg, Z. Q. Xue, H. Y. Chen, S. M. Hou, L. P. Ma, X. W. Fang, S. J. Pang, and S. J. Pennycook, Phys. Rev. Lett. 84, 1780 (2000).
12. S. G. Liu, P. J. Wu, Y. Q. Liu, and D. B Zhu, Mol. Cryst. Liq. Cryst. 275, 211 (1996).
13. J. H. Krieger, N. F. Yndanov, I. K. Igumenov, and S. V. Vaschenko, J. Struct. Chem. 34, 966 (1993).
14. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
15. Work performed by Shalom Wind at IBM Research, T. J. Watson Research Center, Yorktown Heights, NY.
16. A. Bietsch (unpublished results).
17. P. S. D. Lin and H. J. Leamy, Appl. Phys. Lett. 42, 717 (1983).
18. H. R. Kirk, Z. Radzimski, A. Buczkowski, and G. A. Rozgonyi, IEEE Trans. Electron Devices 41, 959 (1994); J. Electrochem. Soc. 146, 1529 (1999).
19. H. R. Kirk, Z. Radzimski, A. Buczkowski, and G. A. Rozgonyi, IEEE Trans. Electron Devices 41, 959 (1994); J. Electrochem. Soc. 146, 1529 (1999).
20. M. Tamatsuka and K. Miki, Solid State Phenom. 63-64, 295 (1998).
21. W. S. Lau, D. S. H. Chan, J. C. H. Phang, K. W. Chow, K. S. Pey, Y. P. Lim, and B. Cronquist, Appl. Phys. Lett. 63, 2240 (1993).
22. P. S. D. Lin, R. B. Marcus, and T. T. Sheng, J. Electrochem. Soc., Solid State Sci. Technol. 130, 1878 (1983).
23. L. Pensak, Phys. Rev. 75, 472 (1949).
24. P. R. Willmott and J. R. Huber, Rev. Mod. Phys. 72, 315 (2000).
25. Werkstoffe and Bauelemente der Elektrotechnik, Keramik, edited by H. Schaumburg (B. G. Teubner, Stuttgart, 1994).
26. J. J. O'Dwyer, The Theory of Electrical Conduction and Breakdown in Solid Dielectrics (Clarendon, Oxford, 1973).
27. R. Waser, T. Baiatu, and K. H. Härdtl, J. Am. Chem. Soc. 73, 1645 (1990); 73, 1654 (1990).
28. R. Waser, T. Baiatu, and K. H. Härdtl, J. Am. Chem. Soc. 73, 1645 (1990); 73, 1654 (1990).
29. R. Waser, J. Am. Chem. Soc. 72, 2234 (1989).
30. G. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri, and A. I. Kingon, J. Appl. Phys. 82, 2359 (1997).
31. W. Hofman, S. Hoffman, and R. Waser, Thin Solid Films 305, 66 (1997).
32. S. H. Pack, E. S. Lee, S. H. Kim, J. Y. Seong, J. P. Mah, C. S. Park, J. S. Choi, and J. H. Jung, J. Mater. Sci. 33, 1239 (1998).
33. T. Baiatu, R. Waser, and K. H. Härdtl, J. Am. Chem. Soc. 73, 1663 (1990).
34. J. G. Simmons and R. R. Verderber, Proc. R. Soc. London. Ser. A 301, 77 (1967).
35. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).