Resistive switching in CeOχ films for nonvolatile memory application

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 334-336

  Sun, Xiao ^a   Sun, Bing ^a   Liu, Lifeng ^a   Xu, Nuo ^a   Liu, Xiaoyan ^a   Han, Ruqi ^a   Kang, Jinfeng ^a,b   Xiong, Guangcheng ^a   Ma, T P ^b,c  

^a PEKING UNIVERSITY   (China)

^b Peking Yale Joint Center for Plant Molecular Genetics and Agrobiotechnology   (China)

^c Yale University   (United States)

Author keywords

CeO ; Conducting filament; Oxygen vacancy; Resistive switching (RS)

Indexed keywords

CONDUCTING FILAMENT; DISTRIBUTION CHARACTERISTICS; HIGH VOLTAGES; MULTI FILAMENTS; NON-VOLATILE MEMORY APPLICATIONS; NONSTOICHIOMETRIC; RESISTIVE RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING (RS); SWITCHING MODELS;

ELECTROFORMING; FILAMENTS (LAMP); OXYGEN; PLATINUM; POLYETHYLENE TEREPHTHALATES; RANDOM ACCESS STORAGE; RAPID SOLIDIFICATION; SWITCHING; SWITCHING SYSTEMS; VACANCIES;

OXYGEN VACANCIES;

EID: 67349241424     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014256     Document Type: Article

References (18)

1. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, and I. K. Yoo, "Reproducible resistance switching in polycrystalline NiO films," Appl. Phys. Lett., vol. 85, no. 23, pp. 5655-5657, Dec. 2004.
2. 3 interface," Appl. Phys. Lett., vol. 85, no. 18, pp. 4073-4075, Nov. 2004.
3. 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching," Appl. Phys. Lett., vol. 89, no. 22, p. 223 509, Nov. 2006.
4. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M. J. Lee, S. A. Seo, and I. K. Yoo, "Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications," IEEE Electron Device Lett., vol. 26, no. 9, pp. 719-721, Oct. 2005.
5. 5 for nonvolatile memory application," IEEE Electron Device Lett., vol. 26, no. 5, pp. 292-294, May 2005.
6. D. Lee, D. K. Hwang, M. Chang, Y. Son, D. J. Seong, D. Choi, and H. Hwang, "Resistance switching of Al doped ZnO for non volatile memory applications," in Proc. IEEE NVSMW, 2006, vol. 21, pp. 86-87.
7. 3," Nat. Mater., vol. 5, no. 4, pp. 312-320, Apr. 2006.
8. 3 memory film," IEEE Electron Device Lett., vol. 26, no. 6, pp. 351-353, Jun. 2005.
9. Y. Ogimoto, Y. Tamai, M. Kawasaki, and Y. Tokura, "Resistance switching memory device with a nanoscale confined current path," Appl. Phys. Lett., vol. 90, no. 14, p. 143 515, Apr. 2007.
10. I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage applications," in IEDM Tech. Dig., 2005, pp. 750-753.
11. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, "Low power and high speed switching of Ti-doped NiO RRAM under the unipolar voltage source of less than 3 V," in IEDM Tech. Dig., 2007, pp. 767-770.
12. A. Chen, S. Haddad, Y.-C. Wu, T.-N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi, "Non-volatile resistive switching for advanced memory applications," in IEDM Tech. Dig., 2005, pp. 746-749.
13. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007.
14. 2 films," Appl. Phys. Lett., vol. 90, no. 11, p. 113 501, Mar. 2007.
15. M. Nolan, J. E. Fearon, and G. W. Watson, "Oxygen vacancy formation and migration in ceria," Solid State Ion., vol. 177, no. 35/36, pp. 3069-3074, Nov. 2006.
16. F. Esch, S. Fabris, L. Zhou, T. Montini, C. Africh, P. Fornasiero, G. Comelli, and R. Rosei, "Electron localization determines defect formation on ceria substrates," Science, vol. 309, no. 5735, pp. 752-755, Jul. 2005.
17. 2 (111)," Phys. Rev. Lett., vol. 99, no. 5, p. 056 101, Aug. 2007.
18. A. Tschope, "Interface defect chemistry and effective conductivity in polycrystalline cerium oxide," J. Electroceramics, vol. 14, no. 1, pp. 5-23, Jan. 2005.