Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 59, Issue 9, 2012, Pages 1906-1918

  Shang, Yang ^a   Fei, Wei ^a   Yu, Hao ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Internal state variable; memristor; nonvolatile memory (NVM) device; phase change memory (PCM); SPICE like simulation; spin transfer toque magnetic tunneling junction (STT MTJ)

Indexed keywords

CMOS INTEGRATED CIRCUITS; DYNAMIC LOADS; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT DESIGN; MAGNETIC DEVICES; MEMRISTORS; NONVOLATILE STORAGE; PHASE CHANGE MEMORY;

INTERNAL STATE VARIABLES; MAGNETIC TUNNELING JUNCTIONS; MEMRISTOR; NONVOLATILE MEMORY DEVICES; PHASE CHANGE MEMORY (PCM);

SPICE;

EID: 84865683982     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2011.2180441     Document Type: Article

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