Insight into distribution and switching of resistive random-access memory filaments based on analysis of variations in memory characteristics

Journal of Applied Physics

Volumn 112, Issue 4, 2012, Pages

  Kinoshita, Kentaro ^a   Tanaka, Hayato ^a   Yoshihara, Masataka ^a   Kishida, Satoru ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS OF VARIATIONS; HIGH-RESISTANCE STATE; MEAN VALUES; MEMORY CELL; MULTI-FILAMENT; RANDOM ACCESS MEMORIES; SET VOLTAGE; SWITCHING CYCLES;

PHYSICAL PROPERTIES;

PHYSICS;

EID: 84865850022     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745056     Document Type: Article

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