Detection of filament formation in forming-free resistive switching SrTiO 3 devices with Ti top electrodes

Applied Physics Letters

Volumn 100, Issue 22, 2012, Pages

  Stille, S ^a   Lenser, Ch ^b   Dittmann, R ^b   Koehl, A ^b   Krug, I ^b   Muenstermann, R ^b   Perlich, J ^c   Schneider, C M ^b   Klemradt, U ^a   Waser, R ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c DESY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILAMENT FORMATION; GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING; HARD X-RAY PHOTOEMISSION; INITIAL RESISTANCE; LAYER THICKNESS; OXIDE PHASIS; RESISTIVE SWITCHING; SRTIO;

ELECTRODES; SWITCHING SYSTEMS; THIN FILM DEVICES; THIN FILMS; TITANIUM;

STRONTIUM TITANATES;

EID: 84862128516     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4724108     Document Type: Article

References (24)

1. R. Waser and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
3. M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y. B. Kim, C. J. Kim, D. H. Seo, S. Seo, U. I. Chung, I. K. Yoo, and K. Kim, Nature Mater. 10, 625 (2011). 10.1038/nmat3070
4. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). 10.1038/nature06932
5. J. P. Strachan, J. J. Yang, R. Muenstermann, A. Scholl, G. Medeiros-Ribeiro, D. R. Stewart, and R. S. Williams, Nanotechnology 20, 485701 (2009). 10.1088/0957-4484/20/48/485701
6. R. Muenstermann, J. J. Yang, J. P. Strachan, G. Medeiros-Ribeiro, R. Dittmann, and R. Waser, Phys. Status Solidi (RRL) 4, 16 (2010). 10.1002/pssr.200903347
7. R. Muenstermann, T. Menke, R. Dittmann, and R. Waser, Adv. Mater. 22, 4819 (2010). 10.1002/adma.201001872
8. X. Tran, B. Gao, J. Kang, X. Wu, L. Wu, Z. Fang, Z. Wang, K. L. Pey, Y. C. Yeo, A. Y. Du, M. Liu, B. Y. Nguyen, M. F. Li, and H. Y. Yu, in IEDM Proceedings (IEEE International, 2011), p. 713.
9. X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H. Y. Yu, N. Singh, G. Q. Lo, X. X. Zhang, and K. L. Pey, Appl. Phys. Lett. 99, 133504 (2011). 10.1063/1.3645623
10. Y. S. Chen, H. Y. Lee, P. S. Chen, T. Y. Wu, C. C. Wang, P. J. Tzeng, F. Chen, M. J. Tsai, and C. Lien, IEEE Electron Device Lett. 31, 1473 (2010). 10.1109/LED.2010.2081658
11. C. Hermes, R. Bruchhaus, and R. Waser, IEEE Electron Device Lett. 32, 1588 (2011). 10.1109/LED.2011.2166371
12. W. Wang, S. Fujita, and S. Wong, IEEE Electron Device Lett. 30, 763 (2009). 10.1109/LED.2009.2021003
13. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, and D. J. Wouters, Solid-State Electron. 58, 42 (2011). 10.1016/j.sse.2010.11.031
14. T. Menke, R. Dittmann, P. Meuffels, K. Szot, and R. Waser, J. Appl. Phys. 106, 114507 (2009). 10.1063/1.3267485
15. R. Muenstermann, T. Menke, R. Dittmann, S. Mi, C.-L. Jia, D. Park, and J. Mayer, J. Appl. Phys. 108, 124504 (2010). 10.1063/1.3520674
16. J. J. Yang, J. P. Strachan, F. Miao, M. Zhang, M. D. Pickett, W. Yi, D. A. A. Ohlberg, G. Medeiros-Ribeiro, and R. S. Williams, Appl. Phys. A: Mater. Sci. Process. 102, 785 (2011). 10.1007/s00339-011-6265-8
17. V. V. Afanas'ev, A. Stesmans, L. Pantisano, S. Cimino, C. Adelmann, L. Goux, Y. Y. Chen, J. A. Kittl, D. Wouters, and M. Jurczak, Appl. Phys. Lett. 98, 132901 (2011). 10.1063/1.3570647
18. See supplementary material at http://dx.doi.org/10.1063/1.4724108 E-APPLAB-100-080223 for information on the EAL and AFM and SEM investigations showing a closed Pt layer.
19. A. Carley, P. Chalker, J. Riviere, and M. Roberts, J. Chem. Soc., Faraday Trans. 83, 351 (1987). 10.1039/f19878300351
20. G. Renaud, R. Lazzari, and F. Leroy, Surf. Sci. Rep. 64, 255 (2019). 10.1016/j.surfrep.2009.07.002
21. S. V. Roth, R. Doehrmann, M. Dommach, M. Kuhlmann, I. Kroeger, R. Gehrke, H. Walter, C. Schroer, B. Lengeler, and P. Mueller-Buschbaum, Rev. Sci. Instrum. 77, 085106 (2006). 10.1063/1.2336195
22. D. Babonneau, J. Appl. Crystallogr. 43, 929 (2010). 10.1107/ S0021889810020352
23. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nature Mater. 5, 312 (2006). 10.1038/nmat1614
24. R. A. de Souza, Phys. Chem. Chem. Phys. 11, 9939 (2009). 10.1039/b904100a