Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Nature Nanotechnology

Volumn 5, Issue 2, 2010, Pages 148-153

  Kwon, Deok Hwang ^a   Kim, Kyung Min ^a,b   Jang, Jae Hyuck ^a   Jeon, Jong Myeong ^a   Lee, Min Hwan ^a,b   Kim, Gun Hwan ^a,b   Li, Xiang Shu ^c   Park, Gyeong Su ^c   Lee, Bora ^d   Han, Seungwu ^a   Kim, Miyoung ^a   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Ewha Womans University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL STORAGE; NANOSTRUCTURES; OXIDE FILMS; SWITCHING; TEMPERATURE; TITANIUM DIOXIDE;

CONDUCTIVITY MEASUREMENTS; HIGH CONDUCTIVITY; NON-VOLATILE MEMORY; OXIDE THIN FILMS; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SWITCHING MECHANISM;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

NANOFILM; NANOMATERIAL; PLATINUM; TITANIUM DIOXIDE;

ARTICLE; CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON DIFFRACTION; FILM; LOW TEMPERATURE; PRIORITY JOURNAL; THIN FILAMENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 76649133422     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2009.456     Document Type: Article

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