SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 13, 2011, Pages

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

(8) Tseng, Hsueh Chih a Chang, Ting Chang a,b Huang, Jheng Jie a Yang, Po Chun a Chen, Yu Ting a Jian, Fu Yen c Sze, S M a,c,d Tsai, Ming Jinn e

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d Stanford University (United States)

e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; FORMING PROCESS; NEGATIVE BIAS; ON/OFF RATIO; OPERATION VOLTAGE; POSITIVE BIAS; RELIABILITY TEST; RESISTIVE SWITCHING; TEMPERATURE DEPENDENCE; TRANSITION MECHANISM;

TITANIUM NITRIDE; YTTERBIUM;

SWITCHING SYSTEMS;

EID: 80053494334 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3645004 Document Type: Article

Times cited : (22)

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