Bipolar and unipolar resistive switching in cu-doped SiO2

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2762-2768

  Schindler, Christina ^a,b   Thermadam, Sarath Chandran Puthen ^a   Waser, Rainer ^b   Kozicki, Michael N ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Electrical switching; Nonvolatile memory; Silicon oxide; Solid electrolytes

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRIC SWITCHES; SILICA; SOLID ELECTROLYTES; THERMAL DIFFUSION;

BACK-END-OF-LINE PROCESSING; BIPOLAR SWITCHING; COPPER-DOPED SILICON DIOXIDE; PROGRAMMABLE METALLIZATION CELL; UNIPOLAR SWITCHING;

NONVOLATILE STORAGE;

EID: 35148849058     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904402     Document Type: Article

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