Performance and reliability trade-offs for high-κ RRAM

Microelectronics Reliability

Volumn 54, Issue 9-10, 2014, Pages 2253-2257

  Raghavan, Nagarajan ^a  

^a SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

Author keywords

Design for reliability; Endurance degradation; Filament; OxRAM; Read disturb immunity; Retention loss

Indexed keywords

FILAMENTS (LAMP); PRODUCT DESIGN; RELIABILITY; RRAM; VIRTUAL STORAGE;

COMMERCIAL APPLICATIONS; DESIGN FOR RELIABILITY; HIGH-DENSITY INTEGRATION; OXRAM; PERFORMANCE AND RELIABILITIES; READ DISTURB; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RETENTION LOSS;

ECONOMIC AND SOCIAL EFFECTS;

EID: 84908497936     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2014.07.135     Document Type: Conference Paper

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