Nonvolatile resistive switching in Pr0.7 Ca0.3 MnO3 devices using multilayer graphene electrodes

Applied Physics Letters

Volumn 98, Issue 3, 2011, Pages

  Lee, Wootae ^a   Jo, Gunho ^a   Lee, Sangchul ^a   Park, Jubong ^a   Jo, Minseok ^a   Lee, Joonmyoung ^a   Jung, Seungjae ^a   Kim, Seonghyun ^a   Shin, Jungho ^a   Park, Sangsu ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING ELECTRODES; HIGH-RESISTANCE STATE; LARGE SHIFTS; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; ON/OFF RATIO; ORDERS OF MAGNITUDE; PEAK POSITION; RESISTANCE STATE; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS;

DISSOLUTION; GRAPHENE; GRAPHITE ELECTRODES; MANGANESE OXIDE; MULTILAYERS; RAMAN SPECTROSCOPY; SWITCHING;

SWITCHING SYSTEMS;

EID: 79251550470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544051     Document Type: Article

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