Delayed switching in memristors and memristive systems

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 755-757

  Wang, Frank Zhigang ^a   Helian, Na ^b   Wu, Sining ^a   Lim, Mian Guan ^a   Guo, Yike ^c   Parker, Michael Andrew ^d  

^a CRANFIELD UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF HERTFORDSHIRE   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electronic device; memristive system; memristor; random access memory; resistively switching

Indexed keywords

COMPUTER MEMORIES; ELECTRONIC DEVICE; EQUILIBRIUM STATE; MEMRISTOR; OR FLUXES; PHYSICAL INTERPRETATION; POTENTIAL APPLICATIONS; RANDOM ACCESS MEMORIES; RESISTANCE VALUES; TIME INTERVAL; ULTRADENSE; WAVE FORMS;

COMPUTERS; DELAY CIRCUITS; RANDOM ACCESS STORAGE; THERMOELECTRIC EQUIPMENT;

SWITCHING;

EID: 77954142508     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2049560     Document Type: Article

References (9)

1. L. Chua, "Memristor-The missing circuit element," IEEE Trans. Circuit Theory, vol.CT-18, no.5, pp. 507-519, Sep. 1971.
2. D. Strukov, G. Snider, D. Stewart, and S. Williams, "The missing memristor found," Nature, vol.453, no.7191, pp. 80-83, May 2008.
3. Y. Pershin and M. Di Ventra, Spin Memristive Systems, 2008. Arxiv preprint. [Online]. Available httparxiv.orgpdf0806.2151
4. Y. Pershin and M. Di Ventra, "Current-voltage characteristics of semiconductorferromagnet junctions in the spin-blockade regime," Phys. Rev. B, Condens. Matter, vol.77, no.7, p. 073301, Feb. 2008.
5. S. Liu, "A new concept for non-volatile memory The electric pulse induced resistive change effect in colossal magnetoresistive thin films," in Proc. Non-Volatile Memory Technol. Symp., 2001, pp. 1-7.
6. L. Chua and S. Kang, "Memristive devices and systems," Proc. IEEE, vol.64, no.2, pp. 209-223, Feb. 1976; 2008. [Online]. Available
7. M. Ventra, V. Yuriy, and L. Chua, "Circuit elements with memory Memristors, memcapacitors and meminductors," Proc. IEEE, vol.97, no.10, pp. 1715-1716, Oct. 2009.
8. S. Adee, "Resistance to memristance," IEEE Spectr., vol.45, no.12, p. 30, 2008.
9. F. Z. Wang, "Diode-free magnetic random access memory," Appl. Phys. Lett., vol.77, no.13, pp. 2036-2038, Sep. 25, 2000.