Synaptic behaviors and modeling of a metal oxide memristive device

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 857-863

  Chang, Ting ^a   Jo, Sung Hyun ^a   Kim, Kuk Hwan ^a   Sheridan, Patrick ^a   Gaba, Siddharth ^a   Lu, Wei ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CIRCUIT COMPONENTS; CIRCUIT SIMULATORS; DIFFUSION EFFECTS; INTERNAL STATE VARIABLES; ION DRIFTS; LONG-TERM POTENTIATIONS; LOW-TEMPERATURE PROCESS; MEMRISTIVE BEHAVIOR; MEMRISTOR; METAL OXIDES; NANO SCALE; PHYSICAL MODEL; POTENTIAL APPLICATIONS; SCHOTTKY BARRIERS; SPICE MODEL; TUNGSTEN OXIDE;

ANALOG CIRCUITS; METALLIC COMPOUNDS; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; TUNGSTEN; TUNGSTEN COMPOUNDS;

SPICE;

EID: 79959342648     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6296-1     Document Type: Article

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