Complementary resistive switching in tantalum oxide-based resistive memory devices

Applied Physics Letters

Volumn 100, Issue 20, 2012, Pages

  Yang, Yuchao ^a   Sheridan, Patrick ^a   Lu, Wei ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MEMORY CELL; PATH PROBLEMS; POLARITY REVERSAL; POTENTIAL SOLUTIONS; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SWITCHING EFFECT; SYMMETRY-BREAKING; VOLTAGE BIAS;

SEMICONDUCTOR STORAGE; SWITCHING; SWITCHING SYSTEMS; TANTALUM;

TANTALUM OXIDES;

EID: 84861822371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4719198     Document Type: Article

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